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Hitachi Develops Technology to Quickly Create DRAM Alumina Insulating Film with Low Leakage Current.


Tokyo, Japan, Sept 14, 2006 - (JCN JCN Japan Corporate News
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) - Hitachi has developed a technology to create DRAM alumina alumina (əl`mĭnə) or aluminum oxide, Al2O3, chemical compound with m.p. about 2,000°C; and sp. gr. about 4.0.  insulating film with low leakage current in a short period of time.

The technology uses water, instead of ozone, as an alumina film material to shorten film formation time. It also uses oxynitride film with even thickness between alumina and polysilicon, a lower electrode electrode, terminal through which electric current passes between metallic and nonmetallic parts of an electric circuit. In most familiar circuits current is carried by metallic conductors, but in some circuits the current passes for some distance through a , both of which have high affinity with oxynitride, to lower leakage current and increase the capacitor's reliability. The company claims that the technology helps reduce DRAM power consumption by about 10% and extends the battery life of mobile devices, compared to when ozone is used as a material.

Hitachi has confirmed that a prototype made with the new technology achieves an oxide film equivalent film thickness of 2.9nm and a leak current of less than 1E-8 A/cm2 at a plate voltage of 1V. A time-dependent dielectric dielectric (dī'ĭlĕk`trĭk), material that does not conduct electricity readily, i.e., an insulator (see insulation). A good dielectric should also have other properties: It must resist breakdown under high voltages; it should not  breakdown test showed that the capacitor capacitor or condenser, device for the storage of electric charge. Simple capacitors consist of two plates made of an electrically conducting material (e.g., a metal) and separated by a nonconducting material or dielectric (e.g.  has an extrapolated life of more than 100 years.

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Publication:JCNN News Summaries
Date:Sep 14, 2006
Words:172
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