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HUGHES SCIENTISTS AGAIN RAISE ANTE ON TRANSISTOR SPEED, PERFORMANCE

HUGHES SCIENTISTS AGAIN RAISE ANTE ON TRANSISTOR SPEED, PERFORMANCE
 MALIBU, Calif., Feb. 24 /PRNewswire/ -- Using advanced techniques for growing ultra-thin crystalline layers on a substrate and "writing" circuit lines with an electron beam, scientists at Hughes Research Laboratories have designed and fabricated a transistor capable of operating at the highest frequency ever reported.
 In a professional journal article published this week, the Hughes researchers disclosed a record-breaking performance of 300 GHz cutoff frequency (300 billion cycles per second). This is 20 percent faster than the best previously reported speed -- set by the same Hughes scientific team two years ago -- and is the highest value yet reported for any three-terminal semiconductor device at room temperature.
 In addition to the high-frequency performance, the device displayed exceptional low-noise and high-gain characteristics, both essential for satellite and other high-speed, high-capacity communications applications. According to the scientists, the work significantly advances the state of the art and promises substantial improvements in device performance at millimeter-wave frequencies in the near future.
 The device is a high electron mobility transistor (HEMT), a type of device in which the electrons can move faster and with less scattering than with conventional field-effect transistors. It was made of aluminum indium arsenide/gallium indium arsenide on an indium phosphide substrate by molecular beam epitaxy.
 Hughes Research Laboratories is a part of Hughes Aircraft Co., a unit of GM Hughes Electronics.
 -0- 2/24/92
 /CONTACT: Bill Herrman of Hughes Aircraft, 310-568-6307/ CO: Hughes Aircraft Co. ST: California IN: ARO SU:


KJ-CH -- LA013 -- 1933 02/24/92 13:24 EST
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Date:Feb 24, 1992
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