HP Expands Line of SOT-323-packaged Silicon Transistors; 40-percent Smaller Than SOT-23- and SOT-143-packaged Devices.

PALO ALTO, Calif.--(BUSINESS WIRE)--April 17, 1998-- Hewlett-Packard Company today announced that the well-proven and widely used AT-320XX and AT-415XX die are now available in a 4.2-square-mm package -- 40-percent smaller than conventional SOT-23 and SOT-143 packages.

The AT-32032 low-current, high-performance silicon bipolar transistor is characterized for end-of-life battery use and is capable of providing good noise figure and gain performance under low-bias conditions. It may be used between 1V and 5V, with as little as 1mA of current, allowing designers of wireless-communications equipment to use a smaller battery or to obtain more operating hours from the same battery. At 900MHz, in typical amplifier designs, the transistor features 1dB noise figure and 15dB associated gain with 2.7V and 5mA bias level. High-gain capability -- even at 1V and 1mA -- makes this device an excellent choice for 900MHz pagers operating from a single battery cell.

The AT-41532 general-purpose, low-noise silicon bipolar transistor is designed for applications such as cellular phones, wireless local area networks and direct-broadcast satellite receivers. Its combination of performance features makes it an excellent choice for low-noise amplifiers, gain stages, buffers, oscillators, active mixers and other high-frequency applications. At 900MHz in typical amplifier designs, the AT-41532 transistor yields a 1dB noise figure with 15dB associated gain and power output at 1dB gain compression of +14.5dBm at 5V, 25mA. The transistor is characterized for operation at 2.7, 5 and 8 volts, with voltage breakdown high enough to support operation at 10V. The geometry of this transistor combines a 4-micron emitter-to-emitter pitch with a 14-emitter-finger interdigitated geometry. The result is an intermediate-size transistor with impedances that are easy to match. An optimum noise match near 50ohms at 900MHz makes this transistor particularly easy to use as a low-noise receiver preamplifier.

Both transistors are fabricated with HP's 10GHz Ft self-aligned transistor (SAT) process. The die are nitride-passivated for surface protection. Excellent device uniformity, performance and reliability are achieved through the combination of ion implantation, self-alignment techniques and gold metalization.

Both transistors are available in bulk (100-piece increments) and in tape-and-reel packaging for automated manufacturing, with 3,000 units supplied on a 7-inch reel and 10,000 units supplied on a 13-inch reel. -0-

U.S. PRICE AND AVAILABILITY

Units               10,000 to 24,999

AT-32032            $0.27 per unit
AT-41532             0.27 per unit

This part is available now.

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Further information on HP's RF components is available at http://www.hp.com/go/rf.

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Hewlett-Packard Company is a leading global provider of computing, Internet and intranet solutions, services, communications products and measurement solutions, all of which are recognized for excellence in quality and support. HP has 123,300 employees and had revenue of $42.9 billion in its 1997 fiscal year.

Information about HP and its products can be found on the World Wide Web at http://www.hp.com -0-

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Information in this release applies specifically to products available in the United States. Product availability and specifications may vary in non-U.S. markets.

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