HP'S New Superior-Consistency PHEMT Process Provides 0.5dB Noise Figure High-Linearity FET in a SOT-343 Package.

SAN JOSE, Calif.--(BUSINESS WIRE)--Feb. 22, 1999--

Miniature Device Features 6-sigma Gain Variation of Less Than 1dB

Hewlett-Packard Company today introduced the first in a new family of low-noise pseudomorphic high-electron mobility transistors (PHEMT), which use HP's latest-generation gallium arsenide (GaAs) fabrication process. The announcement was made here at the Wireless Symposium/Portable by Design Conference, which runs Feb. 22 - 26 at the San Jose Convention Center.

The ATF-34143 features 0.5dB noise figure, +14dBm third-order input intercept point and 17.5dB gain at 2GHz, 4V, 60mA. The new transistor is optimized for 0.9GHz to 2.5GHz cellular PCS base station low-noise amplifiers (LNAs). The FET (field-effect transistor) also can be used in many other applications in the 450MHz to 10GHz frequency range. This ultra-low-noise transistor has a gate width ofF 800 microns and is supplied in the 2mm x 2mm SOT-343 surface mount plastic package, providing thermal resistance (theta jc) of 25 degrees C/W.

HP's new fabrication process is optimized for low noise and superior uniformity in 0.9GHz to 2.5GHz applications. The result is devices with exceptionally tight RF and dc parameter distribution. As an example, the 6-sigma spread (sample of 450 parts from nine wafers) for NF at 2GHz, 4V, 60mA is only 0.2dB; gain variation is less than 1dB. The 0.5 micron PHEMTs are fabricated using precision optical stepper-projection lithography on molecular beam epitaxial (MBE) material. The material is grown in a state-of-the-art multiwafer MBE system using proprietary targeting and characterization techniques, yielding extremely uniform and reproducible material. Multilayer photoresist is used to generate a mushroom gold gate with very low gate resistance, and selective dry etching is used to produce devices with very tight distribution of dc and RF characteristics. The devices have been extensively life tested and demonstrate excellent reliability.

Demo boards, application notes, models and characterization data at 2V and 4V are available on the HP Web site at http://www.hp.com/go/rf. Once at the site, visitors should jump to the HPRFhelp section for product selection information.

This transistor is available in bulk antistatic bags of 100 pieces, on 7-inch reels containing 3,000 devices and on 13-inch reels containing 10,000 devices.

U.S. Pricing and Availability -0-

Units                      10,000 to 24,999
ATF-34143                  $1.82 per unit

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This part is available now.

Further information on HP's RF components is available at http://www.hp.com/go/rf.

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