General Semiconductor Introduces Low Voltage Trench Power MOSFETs.

MELVILLE, N.Y.--(BUSINESS WIRE)--Nov. 18, 1999--

General Semiconductor, Inc. (NYSE:SEM), a leading manufacturer of discrete semiconductors, today announced the first product offering of the Company's new GENFET(TM) family of low voltage power MOSFETs. The new low voltage products are designed to improve the efficiency of dc-to-dc conversion circuits that power high performance microprocessors in both desktop and notebook computers.

General Semiconductor's Low Voltage Power MOSFETs utilize a proprietary high cell density trench technology providing a very low gate charge per unit of on-resistance, in addition to fast switching times. The GENFET line is designed at General Semiconductor's Silicon Valley design center and fabricated in a foundry relationship with Mosel Vitelic of Hsinchu Science Park in Taiwan.

The GENFET devices are optimized for the synchronous rectification function performed in a dc-to-dc converter. These components provide the very low on-resistance required for the MOSFET portion of the circuit in leading edge converter designs. For desktop computers the offering includes the GFP70N03 in a thru-hole TO220 and GFB70N03 in a surface mount TO-263. Both of the Company's devices provide an on-resistance of 8.0m(OMEGA) with a 35nC gate charge. In a dc-to-dc synchronous converter with a 16-A output and a Vout of 2V, the GFB70N03 delivers 80% efficiency and 90% at 3A output. For notebook computers the offering includes the GF4420 in a surface mount SO-8 package. The GF4420 will have an on-resistance of 9.0m(OMEGA) with a 35nC gate charge.

"The GENFET family of Low Voltage MOSFETs, coupled with our leading market position in Schottky, ultrafast and standard rectifiers, provides General Semiconductor with building block power management components that motherboard manufacturers require to boost power supply efficiency," stated Ronald Ostertag, Chairman and CEO of General Semiconductor. "We have an excellent working relationship with Mosel Vitelic and look forward to a mutually beneficial partnership."

"The demanding power supply specifications for next generation microprocessors place increasing importance on MOSFETs designed to optimize switching at high frequencies with the least amount of current losses" according to Matthew O'Reilly, Vice President of Marketing and Business Development of General Semiconductor.

According to Michael Liang, Vice President, Foundry Business at Mosel Vitelic, "Our DRAM equipment set is ideally suited to General Semiconductor's high density proprietary trench MOSFET process. I am very excited about the opportunity to partner with General Semiconductor in the launching this new product line."

General Semiconductor, Inc. is a market leader in the discrete segment of the semiconductor industry with manufacturing facilities in China, France, Germany, Ireland, Taiwan and the United States. The Company provides customers with a broad array of power rectifiers, transient voltage suppressors, small signal transistors, diodes and MOSFETs. It has a diversified customer base, in terms of geography and end-use markets. Customers include leading manufacturers, located around the globe, of consumer electronics, lighting, telecommunications equipment, computers, automotive and automotive aftermarket products.

The information set forth above includes "forward-looking" information and, accordingly, the cautionary statements contained in Exhibit 99 to the Company's Form 10-K/A and Form 10-Q filings with the Securities and Exchange Commission are incorporated herein by reference. General Semiconductor's actual results could differ materially from the "forward-looking" information in this press release.

Visit General Semiconductor on the web at www.gensemi.com