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Browse Gallium nitrate topic

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1-58 out of 58 article(s)
Title Author Type Date Words
United States : RFMD Ships Pre-Production Gallium Nitride (GaN)-Based CATV Hybrid Amplifiers to Major U.S.-Based CATV Equipment Provider. Company overview Dec 14, 2009 317
United States : RFMD Ships Pre-Production Gallium Nitride (GaN)-Based CATV Hybrid Amplifiers to Major U.S.-Based CATV Equipment Provider. Company overview Dec 11, 2009 315
NEC and NEC Electronics Develop High Threshold Voltage Control Gallium Nitride (GaN) Power Transistor on a Silicon (Si) Substrate. Dec 10, 2009 619
Genta to Support Initiation of New Clinical Trial using Ganite[R] as Treatment for Life-Threatening Infections in Patients with Cystic Fibrosis. Dec 2, 2009 1007
Germany: HRL orders Aixtron CCS MOCVD reactor to boost GaN HEMT capabilities. Nov 25, 2009 247
United States : HRL Laboratories to Boost its GaN HEMT MMIC Capabilities With New AIXTRON CCS MOCVD Tool. Nov 25, 2009 225
Genta Incorporated to Present at the Lazard Capital Markets Sixth Annual Healthcare Conference. Conference news Nov 10, 2009 605
RFMD'S GALIUM NITRIDE PROCESS DEMONSTRATES RELIABILITY. Company overview Nov 1, 2009 418
TriQuint Receives DARPA Award to Explore 'Next' Advanced GaN Technology. Oct 19, 2009 1017
United States: Nitride with Silicon Improves Solar Cell Efficiency. Oct 6, 2009 488
United States :RF Micro Devices Announces Successful Demonstration of Gallium Nitride Process Technology. Oct 6, 2009 318
Japan : Fujitsu Claims Development of First Millimeter-Wave Gallium-Nitride Transceiver Amplifier Chipset. Oct 3, 2009 221
Netherlands: Fujitsu develops gallium-nitride transceiver amplifier chips. Oct 3, 2009 270
Japan: Fujitsu Develops World's First Millimeter-Wave Gallium-Nitride Transceiver Amplifier Chipset. Oct 1, 2009 270
Fujitsu Develops World's First Millimeter-Wave Gallium-Nitride Transceiver Amplifier Chipset. Sep 30, 2009 1573
Japan: Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply. Jun 27, 2009 423
United States: Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply. Jun 26, 2009 479
Japan: Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply. Jun 25, 2009 423
United States: Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply. Jun 25, 2009 479
Japan: Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply. Jun 24, 2009 479
Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply. Jun 24, 2009 1690
Fujitsu Develops World's First 100 W-Class X-band High-Output Amplifier Featuring High Efficiency Exceeding 50%. Jun 12, 2009 1510
TriQuint GaN Success Leads to Phase 3 DARPA R&D Contract. Jun 2, 2009 1005
Strategies Unlimited Forecasts Increasing Demand for Advanced Substrates for Gallium Nitride Devices. May 26, 2009 476
sp3 Diamond Technologies Announces Commercial Availability of Silicon on Diamond Wafers for High-Power, High-Frequency Devices. Apr 14, 2009 556
United States: Raytheon's Integrated Defense Systems business wins phase-two contract to develop gallium nitride solid-state source. Mar 16, 2009 74
Digi-Key Corporation Expands Cree Product Line to Include Gallium Nitride (GaN) HEMTs for Microwave Applications. Jan 22, 2009 505
United Kingdom: GaN microelectronic device market to grow at CAGR of 98% to 2012. Dec 20, 2008 237
Strategy Analytics: Defense Dominates GaN Demand. Dec 18, 2008 315
United States: RFMD Awarded DOD Follow-on Contract; Selected to Support Samsung 3G Platform; Begins Volume Shipment of 2G Transmit Module. Company overview Nov 13, 2008 609
Fujitsu Laboratories Develops C- to X- Ultra-Wideband Gallium-Nitride HEMT Power Amplifier Featuring High Output and Efficiency; Achieves World's Highest Performance in 5 GHz Bandwidth for a Hybrid Amplifier. Nov 4, 2008 1316
Japan: Fujitsu Laboratories Develops High-Efficiency Gallium-Nitride HEMT Power Amplifier Featuring Worlds Highest Output Power. Oct 21, 2008 173
Fujitsu Develops World's First Gallium-Nitride HEMT Able to Cut Power in Standby Mode and Achieve High Output. Oct 10, 2008 1180
Japan: Fujitsu Develops World's First Gallium-Nitride HEMT Able to Cut Power in Standby Mode and Achieve High Output. Oct 10, 2008 176
United States: TriQuint launches GaN foundry service. Jun 20, 2008 186
TriQuint Semiconductor Reveals Gallium Nitride Products, Opens Industry's 1st GaN Foundry Service. Jun 18, 2008 1195
State-of-the-art Knowledge and Applications of Porous Semiconductor Materials having a Wide Band Gap. May 13, 2008 208
TriQuint Semiconductor, IQE PIc Announce Order for Largest Commercial GaN Project to Support Ramp of New Product Line. Mar 17, 2008 1264
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band. Oct 9, 2007 682
Arrowhead Subsidiary, Aonex, Demonstrates High Quality GaN Growth on Its Proprietary A-GaN(TM) Substrates Which Target the GaN Laser Diode and LED Device Markets. Oct 5, 2007 1028
Sirenza Microdevices Achieves Record Gallium Nitride (GaN) Semiconductor Technology Power and Noise Performance. Jul 17, 2007 597
RFMD Introduces Portfolio of 48V High Power GaN Transistors. Jun 7, 2007 909
RFMD(R) Extends Portfolio of GaN Wideband Power Amplifiers. Jun 5, 2007 1045
Cree and AWR Offer GaN MMIC Process Design Kit for Microwave Office Design Suite. Jun 5, 2007 700
Strategy Analytics: RFMD's Solid GaN Strategy Augmented by Military Involvement. Mar 12, 2007 341
Kopin Announces Development of GaN Transistors for Next-Generation Power Amplifiers. Mar 6, 2007 592
Arrowhead Subsidiary Collaborates with Kyma Technologies to Reduce the Cost of Blue Lasers and Blue LEDs. Feb 26, 2007 871
RFMD(R) Receives GaN Purchase Order from Top-Tier Military Supplier. Jan 25, 2007 1016
STRATEGY ANALYTICS: Gallium Nitride Momentum Will Continue into 2007 and Beyond; Emerging Opportunities in Optoelectronic and RF Applications. Dec 20, 2006 346
Arrowhead Subsidiary, Aonex Technologies, Inc., Demonstrates GaN Growth on Proprietary Substrates That Nearly Eliminate Thermal-Induced Bowing. Nov 29, 2006 927
RFMD Introduces Family OF GaN Power Amplifiers for WCDMA, WiMAX and Public Mobile Radio Applications. Nov 16, 2006 820
Toshiba Announces Gallium Nitride Power FET With World's Highest Output Power in X-band. Nov 13, 2006 784
Strategies Unlimited Predicts Increasing Role for Advanced Substrates for Gallium Nitride Devices. Oct 3, 2006 436
ABI Research Asks: Is Mobile Wireless Infrastructure the Best Target Market for Gallium Nitride? Sep 7, 2006 429
RFMD(R) Introduces GaN High-Power Transistor Product Family; Company Currently Sampling Lead Base Station Customers. Jun 13, 2006 895
Aixtron AG: Leading Taiwan University selects Thomas Swan CCS. Nov 21, 2005 946
Aixtron AG: AZZURRO Semiconductors AG Produces 150 mm GaN on Si Thomas Swan CCS. Nov 14, 2005 957
Oki Electric Develops GaN-HEMT on Silicon Substrate with Record High Amplifying Characteristics; Planned for Deployment in WiMAX Products. Oct 16, 2005 662

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