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GaSonics Introduces New Plasma Source for Its PEP Line of Integrated Clean Systems.

SAN JOSE San Jose, city, United States
San Jose (sănəzā`, săn hōzā`), city (1990 pop. 782,248), seat of Santa Clara co., W central Calif.; founded 1777, inc. 1850.
, Calif.--(BUSINESS WIRE)--July 7, 1998--GaSonics International (NASDAQ/NM:GSNX), a leading supplier of integrated clean solutions, today announced the introduction of the Stinger(tm) source -- a new plasma source Plasma sources generate plasmas.

Excitation of a plasma requires partial ionisation of neutral atoms and/or molecules of a medium. There are several ways to cause ionisation: collisions of energetic particles, strong electric fields acting on bond electrons, or ionising
 for GaSonics' line of Performance Enhancement Platform (PEP) systems. Utilizing the same microwave source technology featured in GaSonics' Millennia(tm) 300 mm integrated clean system, the Stinger offers chipmakers lower cost of ownership, higher removal rates and higher throughput for 200 mm photoresist A film used in photolithography that temporarily holds the pattern of a circuit path or microscopic element of a chip. When exposed to light, it hardens and is resistant to the acid bath that washes away the unexposed areas. Not to be confused with photoresistor. , residue removal and isotropic Refers to properties that do not differ no matter which direction is measured. For example, an isotropic antenna radiates almost the same power in all directions. In practice, antennas cannot be 100% isotropic.  etch To create a design in a material by digging out the material. The circuit designs on printed circuit boards and chips are etched by acid. See chip and printed circuit board.  applications.

Commenting on the significance of the new plasma source, GaSonics' President and Chief Executive Officer Asuri Raghavan noted, "With the Stinger source, we are bringing our best-of-breed 300 mm source technology to our popular PEP line of 200 mm integrated clean systems. This technology, which combines the advantages of our 200 mm photoresist and residue removal source technologies into a single, more powerful plasma source, will become the universal source for all PEP applications." Raghavan added, "Since customers will now be able to develop their 300 mm integrated clean processes on our 200 mm hardware, it enables an easy transition to 300 mm processes."

At the core of the Stinger source is a proprietary power applicator ap·pli·ca·tor
n.
An instrument for applying something, such as a medication.


applicator,
n a device for applying medication; usually a slender rod of glass or wood, used with a pledget of cotton on the end.
 developed in cooperation with Oakridge National Labs. The applicator, which is currently used in GaSonics' production-proven PEP photoresist removal system, is used in conjunction with a tuned cavity to deliver microwave power uniformly over a larger area of the plasma chamber. As a result, more energy is available for active species generation than prior-generation hardware, thus improving efficiency by more than 20 percent and enabling higher removal rates. In addition, the source is capable of delivering 3 kW of power to generate much higher removal rates or maintain the same rates at lower temperature, which is critical for temperature-sensitive process steps involving copper, low k dielectrics or implanted resist.

GaSonics' Director of Product Management Ken Drachnik noted, "The Stinger source is a key enabler in allowing our customers to operate efficiently over a wide range of process chemistries and conditions used in advanced clean applications. Even on current applications, customers immediately realize the source's process and cost-of-ownership advantages. For instance, because the source can utilize sapphire components, it is ideal for fluorine-containing chemistries required for clean applications."

The Stinger's core technology has already been qualified for 0.18 micron. It is also proven for 300 mm applications, resulting in a 5 micron/minute removal rate of DUV DUV Deep Ultraviolet
DUV Data-Under-Voice
DUV Design Under Verification
 resists with less than or equal to 5 percent within wafer uniformity.

The new source will be available on all new PEP systems. GaSonics plans to introduce new solutions for the following applications in the next six to nine months: post-via etch residue removal; post-implant resist and residue removal; post-polysilicon etch residue removal; post-metal etch residue removal; and isotropic etch.

GaSonics International (Nasdaq NM:GSNX) is a leading global supplier of integrated clean solutions. GaSonics' photoresist and residue removal tools improve device performance and increase yield in semiconductor manufacturing. GaSonics' technology leadership also includes vertical high-pressure (VHP VHP Veterans History Project
VHP Vishva Hindu Parishad (India)
VHP Visible Human Project
VHP Vaporized Hydrogen Peroxide (low temperature sterilant)
VHP Very High Pressure
) thermal processing for ultrathin ul·tra·thin  
adj.
Very thin.
 gate oxides and low-pressure chemical vapor deposition Vapor deposition

Production of a film of material often on a heated surface and in a vacuum. Vapor deposition technology is used in a large variety of applications.
 (LPCVD LPCVD Low Pressure Chemical Vapor Deposition ) for liquid-crystal display (LCD) manufacturing. Headquartered in San Jose, Calif., GaSonics supports its installed base of more than 4,500 systems through a global sales and support network. Additional information about the company is available on GaSonics' website, located at http://www.gasonics.com

    CONTACT: GaSonics International
              Andy Kirkpatrick, 408/570-7193
                        or
              MCA, Inc.
              Sheryl Moreno, 650/968-8900


COPYRIGHT 1998 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 1998, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

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Publication:Business Wire
Article Type:Article
Geographic Code:1USA
Date:Jul 7, 1998
Words:571
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