Fujitsu Licenses MoSys 1T-SRAM(R) Technology for Its Leading-Edge 65nm Semiconductor Manufacturing Process; Targets Graphic Applications with Low Power, Fast Speed, and High-Density Embedded Memory Requirements.

TOKYO & SUNNYVALE, Calif. -- MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, and Fujitsu Limited (TSE:6702), a leading provider of customer-focused IT and communications solutions for the global marketplace, announced today an agreement under which MoSys' 1T-SRAM technology is licensed to Fujitsu on its advanced 65 nanometer (nm) production process.

The companies' partnership already covers the 0.13-micron and 90nm semiconductor technologies. With the implementation of MoSys-patented 1T-SRAM memory technology and 1T-Q bit cell to Fujitsu's 65nm process, Fujitsu is able to offer complex SoCs that have a fraction of the die area devoted to embedded memory compared to other competing embedded memory technologies, while maintaining very high performance with extremely low power consumption. The cost savings derived from the smaller embedded memory die area can be allocated to other various uses, such as increasing functionality at the same cost, or significantly reducing unit costs while maintaining the same functionality.

"Since partnering with MoSys, Fujitsu has acquired much experience in the design and manufacturing methodologies of 1T-SRAM-Q technology. We feel this is one of the best embedded memory solutions on 65nm technology," said Kimiaki Satoh, General Manager of the FCRAM Division, Electronic Devices Group of Fujitsu Limited. "Fujitsu already has its own advanced 65nm technology. By having 1T-SRAM-Q based memory macros available on our cutting-edge technology, we can empower our customers by enabling them to meet some of the most demanding challenges of future silicon products -- achieving cost competitiveness while maintaining higher performance. We accomplish these goals without sacrificing memory density and speed."

"We are very pleased to reach this agreement with Fujitsu, which sets an important milestone in validating MoSys patented technologies at the most advanced process node," said Chet Silvestri, chief executive officer at MoSys, Inc. "By adopting MoSys 1T-SRAM technology for its 65 nm products, Fujitsu can use the extensive experience developed on the 0.13-micron and 90 nm processes to provide optimized solutions for its customer base and provides momentum for scaling below 65 nm in the future."

Fujitsu is currently constructing its second 300mm fab, which will support leading-edge 65nm process technologies, and continues to move forward with developments with its cutting-edge technology partners worldwide. In addition to maximizing and further enhancing the advantages of its 65nm process technologies -- fast speed with low power consumption, Fujitsu plans to enrich its design methodology offerings.

About Fujitsu

Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting device technologies, highly reliable computing and communications products, and a worldwide corps of systems and services experts uniquely position Fujitsu to deliver comprehensive solutions that open up infinite possibilities for its customers' success. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of about 4.8 trillion yen (US$40.6 billion) for the fiscal year ended March 31, 2006. See http://www.fujitsu.com for further information.

About MoSys Inc.

Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 100 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

All company and product names mentioned herein are trademarks or registered trademarks of their respective owners.