Freescale introduces industry's first multi-stage RFICs optimized for TD-SCDMA applications.Six additional LDMOS LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOS Lateral DMOS LDMOS Lightly-Doped Drain Metal-Oxide Semiconductor LDMOS Lateral Diffusion Mosfet and MOSFET (Metal Oxide Semiconductor Field Effect Transistor) The most popular and widely used type of field effect transistor (see FET). MOSFETs are either NMOS (n-channel) or PMOS (p-channel) transistors, which are fabricated as individually packaged power amplifiers unveiled for multi-carrier applications BARCELONA, Spain -- In the worldwide race to prepare for deployment of next-generation wireless standards, Freescale Semiconductor today introduced a high power multi-stage RF power LDMOS FET FET: see transistor. (Field Effect Transistor) One of two major categories of transistor; the other is bipolar. FETs use a gate element that, when charged, creates an electromagnetic field that changes the conductivity of a silicon characterized for Time Division-Synchronous Code Division Multiple Access (TD-SCDMA TD-SCDMA Time Division Synchronous Code Division Multiple Access ) wireless base stations. The TD-SCDMA standard is a third-generation wireless access method that is expected to be widely deployed in the People's Republic of China. Freescale is the first company to deliver commercial RF Integrated Circuits (RFICs) characterized for the emerging standard. The high output levels of the newly optimized Freescale MW6IC2240NB allow OEMs to reduce their part count from two or three devices to one, saving board space and reducing power consumption and cost. The flagship MW6IC2240NB is an LDMOS two-stage RFIC RFIC Radio Frequency Integrated Circuit RFIC Radio Frequency Interface Chip . When employed in a final amplifier application at 28 V, it is designed to deliver a gain of 28 dB, ALT1 of -47 dBc and ALT2 of -49 dBc (6-carrier TD-SCDMA signal) from 2010 MHz (MegaHertZ) One million cycles per second. It is used to measure the transmission speed of electronic devices, including channels, buses and the computer's internal clock. A one-megahertz clock (1 MHz) means some number of bits (16, 32, 64, etc. to 2025 MHz at an output power of 35 dBm. The MW6IC2240NB operates from 26 to 32 V and features integrated quiescent current temperature compensation. It is housed in a TO-272 over-molded, cost-effective plastic package. "All wireless markets, including the emerging TD-SCDMA applications, demand the most cost-effective solutions at all levels of technology from components through subsystems," said Gavin P. Woods, vice president and general manager, RF Division, Freescale Semiconductor. "By combining multiple gain stages in a single RFIC package, we designed the MW6IC2240NB to significantly reduce an OEM's design complexity, part count, system size and bill of materials The list of components that make up a system. For example, a bill of materials for a house would include the cement block, lumber, shingles, doors, windows, plumbing, electric, heating and so on. ." More power amplifiers for multi-carrier applications In addition to the MW6IC2240NB, Freescale introduced six additional LDMOS and MOSFET power amplifiers well suited for multi-carrier applications such as CDMA (Code Division Multiple Access) A method for transmitting simultaneous signals over a shared portion of the spectrum. The foremost application of CDMA is the digital cellular phone technology from QUALCOMM that operates in the 800 MHz band and 1.9 GHz PCS band. , W-CDMA See WCDMA. and TD-SCDMA. Operating at a frequency range of 2010 to 2170 MHz, the devices are: * MHV MHV mouse hepatitis virus. 5IC2215N: A two-stage LDMOS driver amplifier with output power of 23 dBm, gain of 27.5 dB, ALT1 of -49 dBc and ALT2 of -50 dBc (6-carrier TD-SCDMA signal). * MRF MRF Markov Random Field MRF Material Recovery Facility MRF Materials Recycling Facility MRF Motorcycle Riders Foundation MRF Medium Range Forecast (weather forecasting model) MRF Movement for Rights and Freedoms 6S21060N: An N-channel, enhancement-mode lateral power MOSFET with output power of 35 dBm, gain of 15.5 dB, ALT1 of -48 dBc and ALT2 of -49 dBc (6 carrier TD-SCDMA signal). * MRF6S21100N: An N-channel, enhancement-mode lateral power MOSFET with output power of 35 dBm, gain of 14.5 dB, ALT1 of -49 dBc and ALT2 of -51 dBc (6 carrier TD-SCDMA signal). * MRF6S21100H: An N-channel enhancement-mode lateral power MOSFET with output power of 35 dBm, gain of 16 dB, ALT1 of -51 dBc and ALT2 of -53 dBc (6 carrier TD-SCDMA signal). * MW6IC2015NB: A two-stage LDMOS driver amplifier with output power of 25 dBm, gain of 27 dB, ALT1 of -50 dBc and ALT2 of -52 dBc (6 carrier TD-SCDMA signal). * MRF7S19080H: An N-channel enhancement-mode lateral power MOSFET with output power of 35 dBm, gain of 18 db, ALT1 of -51 dBc and ALT2 of -52 dBc (6 carrier TD-SCDMA signal). All of the devices are RoHS compliant, have internally-matched inputs and outputs, and are available on tape and reel. They operate from bias voltages of 26 to 32 V. All except the MRF6S21100H and the MRF7S19080H are housed in Freescale's over-molded plastic packages with a temperature rating of 200oC. About TD-SCDMA TD-SCDMA is a third-generation wireless access method that is expected to be widely deployed in the People's Republic of China. The standard provides some advantages when contrasted with access methods such as W-CDMA. For example, TD-SCDMA employs time-division duplexing allowing carriers to dynamically adjust the number of time slots used by the downlink and uplink paths, making it easier to accommodate traffic with varying data rates. The standard does not require "paired" spectrum for the downlink and uplink, which makes spectrum allocation more flexible. By using the same carrier frequency for the uplink and downlink paths, the channel characteristics are the same in both directions. This lets the base station determine the downlink channel information from uplink channel estimates, which is beneficial when applying adaptive beam forming. Availability The MW6IC2240NB, MRF7S19080H, MHV5IC2215N, MRF6S21060N, MRF6S21100N, MRF6S21100H and MW6IC2015NB are in full production and available now. For specific sampling and pricing information, please contact Freescale Semiconductor, a local Freescale sales office or an authorized distributor. About Freescale Semiconductor Freescale Semiconductor, Inc. is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial, networking and wireless markets. The privately held company privately held company A firm whose shares are held within a relatively small circle of owners and are not traded publicly. is based in Austin, Texas, and has design, research and development, manufacturing or sales operations in more than 30 countries. Freescale is one of the world's largest semiconductor companies with 2006 sales of $6.4 billion (USD USD In currencies, this is the abbreviation for the U.S. Dollar. Notes: The currency market, also known as the Foreign Exchange market, is the largest financial market in the world, with a daily average volume of over US $1 trillion. ). www.freescale.com Freescale[TM] and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2007. |
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