Freescale Strengthens Radio Frequency Power Transistor Portfolio for Commercial Aerospace.50-volt LDMOS LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOS Lateral DMOS
LDMOS Lightly-Doped Drain Metal-Oxide Semiconductor
LDMOS Lateral Diffusion Mosfet RF Devices Designed to Meet Demanding Application Requirements of Radar, Avionics and Air Traffic Management Systems
AUSTIN, Texas -- Freescale Semiconductor has reinforced its commitment to the commercial aerospace market with the introduction of a high-performance laterally diffused metal oxide semiconductor See MOS.
(electronics) Metal Oxide Semiconductor - (MOS) The three materials used to form a gate in the most common kind of Field Effect Transistor - a MOSFET. (LDMOS) RF power transistor. The latest addition to Freescale's RF aerospace portfolio, the MRF MRF Markov Random Field
MRF Material Recovery Facility
MRF Materials Recycling Facility
MRF Motorcycle Riders Foundation
MRF Medium Range Forecast (weather forecasting model)
MRF Movement for Rights and Freedoms 6V4300N device is optimized for HF to UHF (Ultra High Frequency) The range of electromagnetic frequencies from 300 MHz to 3 GHz. In the U.S., analog television has used UHF channels 52 to 69 in the 700 MHz band. communications.
The MRF6V4300N power transistor is ideal for a wide range of applications, including radar and air traffic management systems. It is designed to deliver the highest gain and efficiency in its class. The device delivers RF output power of 300W CW from 10 MHz (MegaHertZ) One million cycles per second. It is used to measure the transmission speed of electronic devices, including channels, buses and the computer's internal clock. A one-megahertz clock (1 MHz) means some number of bits (16, 32, 64, etc. to 600 MHz. At 450 MHz, it has a gain of 22 dB and 60 percent efficiency.
"Freescale's LDMOS RF devices have been proven in wireless and other applications around the world, and now we're bringing their capabilities to the aerospace market where they are superior in performance to previous-generation devices currently in use," said Gavin Woods, vice president of Freescale's Radio Frequency Division. "In radar systems, bipolar junction transistors and vertical MOSFETs have been the device of choice for decades. However, their performance has not increased significantly over the years. In contrast, Freescale plans to continue enhancing the output power, frequency range, gain efficiency and ruggedness of its LDMOS technology for many years to come."
Housed in Freescale's RoHS compliant, cost-effective over molded plastic package, the MRF6V4300N device has exceptionally tight mechanical tolerances and an extremely low thermal resistance of 0.24 degrees Celsius per watt (C/W C/W Clockwise
C/W Consistent With
C/W Compatible With
C/W Coupled With
C/W Complete With
C/W Come With
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C/W Course Work
C/W Chilled Water
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C/W Caution/Warning ), which enhances the management of heat dissipation and helps reduce the heat sink size.
Freescale's RF portfolio for aerospace
Earlier this year, Freescale introduced its first LDMOS RF devices for the commercial aerospace market for use in L-band radar applications. The MRF6V14300H 50V LDMOS field-effect transistor (FET FET: see transistor.
(Field Effect Transistor) One of two major categories of transistor; the other is bipolar. FETs use a gate element that, when charged, creates an electromagnetic field that changes the conductivity of a silicon ) is designed to deliver up to 330W of pulsed output power from 1.2 to 1.4 GHz with 18 dB of gain and up to 60.5 percent drain efficiency, which is significantly better than the performance of bipolar junction transistors (BJTs) available for this frequency range.
The MRF6V14300H is accompanied by the MRF6V10010N, a driver amplifier that produces up to 10W of RF output power from 960 MHz to 1.4 GHz. When complemented by Freescale's cost-effective MMG MMG Macquarie Media Group
MMG Ministry Medical Group
MMG Medium Machine Gun
MMG Mobile Messaging Gateway
MMG Master of Management
MMG Meridian Management Group, Inc. 3014N pre-driver in a three-stage lineup, the trio of devices can deliver up to 330W of peak RF output power at 1.4 GHz (300 microsecond One millionth of a second. See space/time and ohnosecond.
(unit) microsecond - One millionth (10^-6) of a second. pulse, 12 percent duty cycle), with 62 dB of total gain, and an overall efficiency up to 59.5 percent including associated combining losses.
In addition, the MRF6VP41KH, introduced in 2007, is one of Freescale's first LDMOS FETs to deliver 1 kW of RF power (100 microsecond pulse, 20 percent duty cycle). It has efficiency of up to 64 percent, 20 dB power gain at 450 MHz and can produce RF output power up to 1 kW at 1 dB compression.
These RF devices, along with the new MRF6V4300N, form a comprehensive portfolio with frequency coverage from HF through L-band. Freescale intends to continue to expand its RF portfolio in frequency and power with additional devices planned for announcement next year.
Freescale's aerospace RF devices incorporate electrostatic discharge (ESD (1) (Electronic Software Distribution) Distributing new software and upgrades via the network rather than individual installations on each machine. See ESL. ) protection, which is engineered to provide exceptional resistance to damage caused by stray energy encountered on assembly lines. This capability also enables a broad gate voltage swing of -6 to +10V to help improve performance when the devices are operated in higher-efficiency modes such as Class C. The rugged devices are designed to handle high impedance mismatches ranging up to 10:1 VSWR VSWR Voltage Standing Wave Ratio
VSWR Vertical Standing Wave Ratio at their rated RF output power when operated from 50V DC supplies.
Pricing and availability
The MRF6V4300N, MRF6V14300H, MRF6V10010N and MRF6VP11KH are in full production and supported by test fixtures. For more information about the MRF6V4300N device, visit www.freescale.com/files/pr/rf.html.
For sampling and pricing information, please contact Freescale Semiconductor, a local Freescale sales office or an authorized distributor.
About Freescale Semiconductor
Freescale Semiconductor is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial, networking, and wireless markets. The privately held company privately held company
A firm whose shares are held within a relatively small circle of owners and are not traded publicly. is based in Austin, Texas, and has design, research and development, manufacturing or sales operations in more than 30 countries. Freescale is one of the world's largest semiconductor companies with 2007 sales of $5.7 billion (USD USD
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