Freescale RF Culture of Innovation Delivers Ultra-Efficient, High Power LDMOS RF Power Transistor.Device Designed to Set New Standards for RF Performance and Dramatically Reduce Amplifier Costs for Industrial, Scientific and Medical Applications HONOLULU -- Today at the MTT-S MTT-S Microwave Theory and Techniques Society (IEEE) International Microwave Symposium, Freescale Semiconductor unveiled the world's highest-power LDMOS LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOS Lateral DMOS LDMOS Lightly-Doped Drain Metal-Oxide Semiconductor LDMOS Lateral Diffusion Mosfet RF power transistor. The MRF MRF Markov Random Field MRF Material Recovery Facility MRF Materials Recycling Facility MRF Motorcycle Riders Foundation MRF Medium Range Forecast (weather forecasting model) MRF Movement for Rights and Freedoms 6VP11KH device delivers pulsed RF output power of 1 kW at 130 MHz and features the highest drain efficiency and power gain of any device in its class. This ultra-efficient transistor is the latest example of Freescale's commitment to deliver the industry's most innovative RF power solutions for industrial, scientific and medical (ISM) markets. It operates at 50V, offers distinct advantages over bipolar and MOSFET (Metal Oxide Semiconductor Field Effect Transistor) The most popular and widely used type of field effect transistor (see FET). MOSFETs are either NMOS (n-channel) or PMOS (p-channel) transistors, which are fabricated as individually packaged devices, and provides the power required for equipment such as magnetic resonance imaging magnetic resonance imaging (MRI), noninvasive diagnostic technique that uses nuclear magnetic resonance to produce cross-sectional images of organs and other internal body structures. (MRI 1. (application) MRI - Magnetic Resonance Imaging. 2. MRI - Measurement Requirements and Interface. ) systems, CO2 lasers, plasma generators and other systems. The high gain at an unprecedented power level drastically reduces the number of parts required by up to 70 percent versus traditional designs. This part count reduction significantly decreases board space requirements and manufacturing complexity, ultimately resulting in lower amplifier costs. "In delivering the MRF6VP11KH, we have set industry benchmarks in efficiency, output power, reliability and ease of design integration," said Gavin P. Woods, vice president and general manager of Freescale's RF Division. "No other RF power device, whether LDMOS, MOSFET or bipolar, can claim this achievement. We will continue to introduce innovative devices for this marketplace, enabling our customers to break new barriers in system performance." Designed for operation from 10 to 150 MHz, the transistor leverages Freescale's sixth-generation, very high-voltage (VHV VHV Vereinigte Hannoversche Versicherungen (German insurance) VHV Village Health Volunteers VHV Veterans Helping Veterans (Marion County, Florida) 6) laterally diffused metal oxide semiconductor See MOS. (electronics) Metal Oxide Semiconductor - (MOS) The three materials used to form a gate in the most common kind of Field Effect Transistor - a MOSFET. (LDMOS) technology and is the latest example of Freescale's commitment to deliver the industry's most innovative RF power solutions for industrial, scientific, and medical (ISM) markets. It joins a family of industry-leading 50V VHV6 LDMOS devices announced in June 2006 to meet the demands of ISM applications operating at HF, VHF (Very High Frequency) The range of electromagnetic frequencies from 30 MHz to 300 MHz. , and UHF (Ultra High Frequency) The range of electromagnetic frequencies from 300 MHz to 3 GHz. In the U.S., analog television has used UHF channels 52 to 69 in the 700 MHz band. frequencies up to 450 MHz. "Freescale has broken the RF 1 kW pulsed power level with 50V LDMOS," said Lance Wilson, semiconductor research director for ABI Abi (ā`bī) [short for Abijah], in the Bible, King Hezekiah's mother. (Application Binary Interface) A specification for a specific hardware platform combined with the operating system. Research. "The MRF6VP11KH's high gain, high efficiency, low thermal resistance and high output mismatch survivability are equally impressive." More than just raw power The benefits of the MRF6VP11KH extend far beyond its status as the most powerful commercially available LDMOS RF transistor. The MRF6VP11KH delivers 65 percent drain efficiency, an exceptionally high value for any type of RF power device. When combined with gain of more than 27 dB, this level of efficiency makes it possible to achieve dramatic reductions in amplifier design complexity, gain stages, parts count and circuit board real estate. An application requiring 2 kW pulsed output power and 45 dB of gain typically requires a 15 W pre-driver, two 15 W drivers and eight final amplifiers when using MOSFETs or bipolar devices - a total of three stages and 11 devices. But a design based on the MRF6VP11KH requires only three devices. A single 10 W LDMOS driver and two MRF6VP11KH final amplifiers produce the same output power and a higher gain of 50 dB. In addition, the 50V bias voltage employed by the MRF6VP11KH produces higher terminal impedances for a given power level, which makes the device easier to match into an amplifier circuit. The thermal resistance of Freescale's RoHS compliant, air-cavity package was measured at less than 0.13o C/W C/W Clockwise C/W Consistent With C/W Compatible With C/W Coupled With C/W Complete With C/W Come With C/W Complied With C/W Course Work C/W Counterweight C/W Chilled Water C/W Carrier Wave C/W Caution/Warning thJC, providing efficient thermal management and reducing heat sink size. The MRF6VP11KH has integrated electrostatic discharge (ESD) protection, which eliminates the need for special handling procedures beyond those routinely observed in electronics manufacturing. LDMOS technology The MRF6VP11KH joins Freescale's family of industry-leading 50V VHV6 LDMOS devices announced in June 2006. Additional devices for 10-to-450 MHz operation that are already in production include the MRF6V2010N (10 W CW, 24 dB gain, 62% efficiency), the MRF6V2150N (150 W CW, 25 dB gain, 68% efficiency), and the MRF6V2300N (300 W CW, 25.5% efficiency, 68% efficiency). Availability Samples of the MRF6VP11KH and a supporting reference design are available now from Freescale and production is expected to begin in Q4 2007. For pricing information, contact Freescale Semiconductor, a local Freescale sales office or a Freescale authorized distributor. About Freescale Semiconductor Freescale Semiconductor is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial, networking and wireless markets. The privately held company privately held company A firm whose shares are held within a relatively small circle of owners and are not traded publicly. is based in Austin, Texas, and has design, research and development, manufacturing or sales operations in more than 30 countries. Freescale is one of the world's largest semiconductor companies with 2006 sales of $6.4 billion (USD USD In currencies, this is the abbreviation for the U.S. Dollar. Notes: The currency market, also known as the Foreign Exchange market, is the largest financial market in the world, with a daily average volume of over US $1 trillion. ). www.freescale.com Freescale Technology Forum The Freescale Technology Forum (FTF) has become the developer event of the year for the embedded semiconductor industry. The Forum, which debuted in 2005, has been enthusiastically received by the global developer community, drawing more than 12,000 attendees at FTF events worldwide since its inception. For more information about FTF events, please go to www.freescale.com/ftf. Freescale[TM] and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2007. |
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