Freescale Aims to Set New Standard in RF Power Performance for Industrial, Scientific and Medical (ISM) Applications.SAN FRANCISCO -- Market Leader in RF Power for Cellular Infrastructure Expands Its Solutions into the ISM Market with Six Advanced Devices Using newly developed high-voltage RF Power technology combined with innovative and cost-effective over-molded plastic packaging, Freescale Semiconductor (NYSE NYSE See: New York Stock Exchange :FSL FSL - Formal Semantics Language. A language for compiler writing. ["A Formal Semantics for Computer Languages and its Application in a Compiler-Compiler", J.A. Feldman, CACM 9(1) (Jan 1966)]. [Sammet 1969, p. 641]. ) (NYSE:FSL.B) today announced an expansion into the industrial, scientific and medical (ISM) market. A leader in the demanding cellular infrastructure market, Freescale is extending its technology and packaging leadership into the ISM market with transistors designed for both the HF/VHF HF/VHF High Frequency/Very High Frequency frequency space (10-450 MHz) and the 2.45 GHz ISM band. This expansion was spawned by the development of 50V VHV VHV Vereinigte Hannoversche Versicherungen (German insurance) VHV Village Health Volunteers VHV Veterans Helping Veterans (Marion County, Florida) 6 RF LDMOS LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOS Lateral DMOS LDMOS Lightly-Doped Drain Metal-Oxide Semiconductor LDMOS Lateral Diffusion Mosfet technology (very high voltage 6th generation RF laterally diffused metal oxide semiconductor See MOS. (electronics) Metal Oxide Semiconductor - (MOS) The three materials used to form a gate in the most common kind of Field Effect Transistor - a MOSFET. ), a 50V enhancement to Freescale's widely-accepted 28V LDMOS technology. The increase to a 50V supply voltage in LDMOS technology allows the designer to achieve higher power levels and to attain performance levels that exceed those available in the ISM marketplace today. In addition, availability of devices in over-molded plastic packaging allows for the most cost-effective ISM solutions available. "Freescale's market leadership in RF Power for cellular infrastructure, combined with the development of 50V LDMOS technology, puts us in a unique position to expand into the ISM space with truly innovative products," said Gavin P. Woods, vice president and general manager of Freescale's RF Division. "Additionally, our leadership in over-molded plastic packaging will allow customers to develop the most cost-effective solutions available for ISM applications, such as plasma generators and MRI 1. (application) MRI - Magnetic Resonance Imaging. 2. MRI - Measurement Requirements and Interface. (magnetic resonance imaging magnetic resonance imaging (MRI), noninvasive diagnostic technique that uses nuclear magnetic resonance to produce cross-sectional images of organs and other internal body structures. ) systems." Raising the Bar in Performance The flagship of Freescale's ISM product offering is the MRF MRF Markov Random Field MRF Material Recovery Facility MRF Materials Recycling Facility MRF Motorcycle Riders Foundation MRF Medium Range Forecast (weather forecasting model) MRF Movement for Rights and Freedoms 6V2300NB, a 300W, 50V LDMOS transistor with a frequency of operation up to 450 MHz and manufactured in the TO-272-WB-4 over-molded plastic package. This device can produce an impressive 27dB of gain at an efficiency of 68 percent. This level of performance allows ISM system designers to eliminate gain stages, and thus reduce overall system cost and decrease board area. In addition to best-in-class performance, the device is extremely stable with a ruggedness tolerance of 10:1 VSWR VSWR Voltage Standing Wave Ratio VSWR Vertical Standing Wave Ratio . Six Innovative Products for ISM Freescale is expanding into two distinct ISM frequency markets: the HF/VHF market and the 2.45 GHz ISM band. Addressing the HF/VHF space from 10 to 450 MHz, Freescale is offering three transistors that use VHV6 50V LDMOS technology. These include the flagship MRF6V2300NB, as well as the MRF6V2150NB (150W, 69 percent efficiency, 25dB gain) and the MRF6V2010NB (10W, 68 percent efficiency, 25dB gain). For the 2.45 GHz ISM band, Freescale offers three devices that use 28V LDMOS technology: the MRF6P24190H (190W, 46 percent efficiency, 13dB gain), the MRF6S24140H (140W, 45 percent efficiency, 13dB gain) and the MW6IC2420NB (2-stage 20W, 21 percent efficiency, 21dB gain). Product Availability Sample quantities of all six ISM devices are available today. Additionally, all three 2.45 GHz devices are in production now. The MRF6V2150NB is planned to be available in full production in August 2006, and the MRF6V2300NB and MRF6V2010NB are planned to be available in full production in Q4 2006. For further information on Freescale's latest RF Power devices, visit www.freescale.com/rf. About Freescale Semiconductor Freescale Semiconductor, Inc. (NYSE:FSL) (NYSE:FSL.B) is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial, networking and wireless markets. Freescale became a publicly traded company publicly traded company A company whose shares of common stock are held by the public and are available for purchase by investors. The shares of publicly traded firms are bought and sold on the organized exchanges or in the over-the-counter market. in July 2004 after more than 50 years as part of Motorola, Inc. The company is based in Austin, Texas, and has design, research and development, manufacturing or sales operations in more than 30 countries. Freescale, a member of the S&P 500(R), is one of the world's largest semiconductor companies with 2005 sales of $5.8 billion (USD USD In currencies, this is the abbreviation for the U.S. Dollar. Notes: The currency market, also known as the Foreign Exchange market, is the largest financial market in the world, with a daily average volume of over US $1 trillion. ). www.freescale.com Reader Inquiry Response: Freescale Semiconductor P.O. Box 17927 Denver, CO 80217 USA Freescale(TM) and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (C) Freescale Semiconductor, Inc. 2006. |
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