Elpida Memory's Fully Buffered DIMMs Support New Dual-Core Intel(R) Xeon(R)-Based Server Platforms; 512 Megabyte, 1 and 2 Gigabyte Memory Modules Validated by Intel and Offer Industry's Highest Memory Performance for Servers.

TOKYO -- Elpida Memory, Inc. (Elpida), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), announced today that they are supporting the launch of the new Dual-Core Intel(R) Xeon(R)-based server and workstation platforms (formerly codenamed "Bensley" and "Glidewell") with its high performance, high bandwidth 512 MB, 1 GB and 2 GB Fully Buffered Dual Inline Memory Modules (FB-DIMMs). The new FB-DIMMs have been validated by Intel for use on the new platform and offer the industry's highest performance memory for servers.

"Intel has tested Elpida's 512 MB, 1 GB and 2 GB FB-DIMMs for interoperability and successfully validated them on our new Dual Core Intel(R) Xeon(R)-based server platform," said Jim Pappas, director of initiatve marketing for Intel Corporation. "FB-DIMM is an important new memory technology and we welcome companies such as Elpida that are providing this innovative technology for the new high-performance dual-core platform."

"Server applications represent the most demanding segment of the memory market in terms of performance and density," said Jun Kitano, director of technical marketing for Elpida Memory (USA) Inc. "We are very pleased to collaborate with Intel to bring the advanced technology to our mutual server customers."

Elpida's FB-DIMMs feature Elpida's state-of-the-art heat spreader design which helps to meet the stringent thermal and reliability requirements of the server platform. They offer data transfer rates of 667 Megabits per second (Mbps), which translates to peak throughput per channel of 8 Gigabytes per second. Elpida's FB-DIMMs are built using 512 Megabit and 1 Gigabit 90 nm DDR2 devices that are already in high volume production, and they complement Elpida's full line-up of DRAM devices and modules.

Elpida has been involved with the development of FB-DIMMs since their inception, and Elpida introduced the availability of their first 4 Gigabyte FB-DIMMs in August 2005 (see release: www.elpida.com/en/news/2005/08-02.html).

About Fully Buffered DIMMs

FB-DIMM was created to address performance limitations associated with the previous standard for Registered DIMMs for server platforms. FB-DIMMs were designed to support next-generation processors and faster bus speeds. The FB-DIMM specification calls for all signals -- clock, address, command and data -- to and from the DRAM devices on the module to be buffered at the high-speed Advanced Memory Buffer (AMB) chip located on the DIMM. This helps to secure the DRAM timing margins during high-speed operation with a much shorter signal path between the DRAM and the AMB. The FB-DIMM also adopts a Point-to-Point connection on the bus between the memory controller and the DIMM, as well as between the DIMMs themselves. This allows increased bus speed with a shorter connection path. It also greatly improves the maximum number of DIMMs that can be loaded on the bus -- up to eight 2-rank DIMMs per channel -- with less concern about signal degradation.

About Elpida Memory, Inc.

Elpida Memory, Inc. is a manufacturer of Dynamic Random Access Memory (DRAM) silicon chips with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. Elpida's state-of-the-art semiconductor wafer manufacturing facilities are located in Hiroshima, Japan. Elpida offers a broad range of leading-edge DRAM products for high-end servers, mobile phones, digital television sets and digital cameras as well as personal computers. Elpida had sales of 207.0 billion Yen during the fiscal year ending March 31, 2005. For more information, visit www.elpida.com.

Intel is a registered trademark of Intel Corporation or its subsidiaries in the United States and other countries. All other trademarks are the property of their respective owners.