Elpida Memory's 512 Megabyte DDR2 SO-DIMMs Offer Low-Power Operation, Improved Thermal Performance for Notebook Applications; New Modules Use Next-Generation 512 Megabit DDR2 Devices that Reduce Operating Current by 30%.TOKYO -- Elpida Memory Elpida Memory, Inc. (エルピーダメモリ株式会社 , Inc. (Elpida), Japan's leading global supplier of Dynamic Random Access Memory Dynamic random access memory (DRAM) is a type of random access memory that stores each bit of data in a separate capacitor within an integrated circuit. Since real capacitors leak charge, the information eventually fades unless the capacitor charge is refreshed periodically. (DRAM), today announced its 512 Megabyte DDR (Double Data Rate) Refers to an SDRAM memory chip that increases performance by doubling the effective data rate of the frontside bus. For more details, see SDRAM. DDR - Double Data Rate Random Access Memory 2 Small-Outline Dual In-line Memory Modules (SO-DIMMs). The modules utilize next-generation 512 Megabit DDR2 SDRAM devices that realize a 30% reduction in IDD (1) (International Direct Dial) Long distance dialing between countries without operator intervention. Also known as international standard dialing (ISD). 0 current (155mA to 110mA) compared to previous generation devices to achieve lower-power operation, improved thermal performance and extended battery life in portable applications including notebooks. "Elpida's 512 Megabyte, low-power, small-outline modules are based on DDR2 SDRAM devices with a reduced operating current," said Jun Kitano, director of Technical Marketing for Elpida Memory (USA). "Therefore, our SO-DIMMs meet customer demand for better thermals -- an essential characteristic for notebooks where board space is a premium and extended battery life is crucial." Elpida's 512 Megabyte SO-DIMMs -- Technical Details: Elpida 512 Megabyte DDR2 SO-DIMMs (Part numbers: EBE EBE Excédent Brut d'Exploitation (French accounting) EBE Extraterrestrial Biological Entity EBE Evidence-Based Education EBE Electron Beam Evaporation (semi-conductor industry) EBE e-Business Engineering 52UD6AFSA-6E-E E-E End-To-End E-E Enterprise-E (Star Trek) E-E Emergency-Essential : PC2-5300, EBE52UD6AFSA-5C-E C-E Communications-Equipment C-E Communications-Electronics C-E Combustion Engineering, Inc : PC2-4200, EBE52UD6AFSA-4A-E A-E, AE above-elbow; see under amputation. : PC2-3200) are available in three speed grades, DDR2-667 (CL=5-5-5), DDR2-533 (CL=4-4-4) and DDR2-400 (CL=3-3-3) respectively, and they are organized as 64M words x 64-bits x 2 Ranks. The modules are composed of 8 pieces of x16 512 Megabit DDR2 SDRAM produced using 100 nm process and assembled in 200-pin JEDEC-standard packages. The devices mounted on modules have a 1.8 Volt operation and a burst length of 4 or 8. Availability Elpida 512 Megabyte DDR2 SO-DIMMs (Part numbers: EBE52UD6AFSA-6E-E, EBE52UD6AFSA-5C-E, EBE52UD6AFSA-4A-E) are currently available in samples. Volume production is expected in July 2005. Note to Editors: High-resolution photo is available. About Elpida Memory, Inc. Elpida Memory, Inc. is a manufacturer of Dynamic Random Access Memory (DRAM) silicon chips with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. Elpida's state-of-the-art semiconductor wafer manufacturing facilities are located in Hiroshima, Japan. Elpida offers a broad range of leading-edge DRAM products for high-end servers, mobile phones, digital television sets and digital cameras as well as personal computers. Elpida had sales of 207.0 billion yen during the fiscal year ending March 31, 2005. For more information, visit www.elpida.com. The information contained within this news release, is current as of the date of release. Please note that the information herein may be revised later without prior notice. |
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