Elpida Memory's 512 Megabit DDR400 SDRAM Devices Enable High-Speed, 1 Gigabyte Memory Modules for Desktop and Workstation Computing.

Business Editors/High-Tech Writers

TOKYO--(BUSINESS WIRE)--Aug. 25, 2003

Improved Low Latency Clock Cycles Match Processor Speeds to

Provide Maximum System Performance

Elpida Memory, Inc. (Elpida), an industry-leading provider of Dynamic Random Access Memory (DRAM), today announced the availability of its 512 Megabit DDR400 SDRAM components and its 1 Gigabyte unbuffered dual in-line memory modules (DIMMs) designed for high-density, high-speed performance in desktop and workstation applications.

Within the computing industry, DDR400 memory is considered to be an important architecture for achieving maximum system performance because it allows the microprocessor's front-side bus and the memory to be synchronized at the very high data rate of 400 Megabits per second (Mbps) per pin. On a 1 Gigabyte module, this translates to 3200 megabytes per second (PC3200).

"High-performance computers will really benefit from the lower latency products because of their ability to decrease memory access clock cycles," said Jun Kitano, director of Technical Marketing for Elpida Memory. "Elpida's DDR400 devices and modules combine both high-frequency and low latency operation to create an optimal environment for robust system performance."

512 Megabit DDR400 SDRAM Components

Elpida's new 512 Megabit SDRAM devices (Part number: EDD5108ADTA) are manufactured using Elpida's proven 0.11 micron process technology at its state-of-the-art 300 mm fabrication facility in Hiroshima, Japan. The devices operate at 200 MHz and they are organized as 64 Million words x 8-bits in TSOP packages. Elpida's devices now achieve a low latency of both (3-3-3) and (3-4-4). These three numbers, commonly referred to as the JEDEC speed bin, are defined as CAS latency (CL), RAS to CAS Delay (tRCD), and Row Precharge (tRP), thus (CL=3-tRCD=3-tRP=3). The lower latency, (3-3-3) and (3-4-4) devices increase system performance by shortening the total clock cycles necessary for memory access including access time, array activation and precharge.

1 Gigabyte Unbuffered DDR DIMMs

Based on Elpida's newest DDR400 devices, the JEDEC-standard, 184-pin 1 Gigabyte PC3200 modules (Part numbers: EBD11UD8ADFB, EBD11ED8ADFB) are organized as 128 Million words x 64/72-bits x 2 ranks), and enable low-voltage (VDD 2.6 V +/- 0.1 V) operation. The DIMMs transfer data at a rate of 3200 Megabytes per second, and they have a programmable CAS latency (CL) of 3, and a burst length of 2, 4, 8. The modules are unbuffered for PC and workstation applications, and they are composed of 16 high-performance 512 Megabit x8 DDR400 components. The module is also available in an unbuffered, x72 configuration that supports Error Correction Code (ECC) for high-end workstation applications.

About Elpida Memory, Inc.

Elpida Memory, Inc. is a manufacturer of Dynamic Random Access Memory (DRAM) with headquarters based in Tokyo, Japan, and sales and marketing operations located in Japan, North America, Europe and Asia. Elpida offers a broad range of leading-edge DRAM products. Elpida is a joint venture company formed by NEC and Hitachi on Dec. 20, 1999 and has been in operation since April 2000. For more information, visit www.elpida.com.

All trademarks are the property of their respective owners.

Reader Contacts

www.elpida.com

Elpida Memory, Inc.

2-1 Yaesu 2-Chome, Chuo-ku

Tokyo, Japan 104-0028

Tel: [phone]

www.elpida.com

Elpida Memory (Europe) GmbH.

Grafenberger Allee 136

40237 Duesseldorf, Germany

www.elpida.com

Elpida Memory (USA) Inc.

2001 Walsh Avenue

Santa Clara, CA 95050

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