Elpida's 512m DDR2 SO-DIMMS offer low-power operation, improved thermal performance for notebook apps.Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory Dynamic random access memory (DRAM) is a type of random access memory that stores each bit of data in a separate capacitor within an integrated circuit. Since real capacitors leak charge, the information eventually fades unless the capacitor charge is refreshed periodically. (DRAM), has announced its 512 Megabyte DDR (Double Data Rate) Refers to an SDRAM memory chip that increases performance by doubling the effective data rate of the frontside bus. For more details, see SDRAM. DDR - Double Data Rate Random Access Memory 2 Small-Outline Dual In-line Memory Modules (SO-DIMMs). The modules utilize next-generation 512 Megabit DDR2 SDRAM devices that realize a 30% reduction in IDD (1) (International Direct Dial) Long distance dialing between countries without operator intervention. Also known as international standard dialing (ISD). 0 current (155mA to 110mA) compared to previous generation devices to achieve lower-power operation, improved thermal performance and extended battery life in portable applications including notebooks. "Elpida's 512 Megabyte, low-power, small-outline modules are based on DDR2 SDRAM devices with a reduced operating current," said Jun Kitano, director of Technical Marketing for Elpida Memory (USA). "Therefore, our SO-DIMMs meet customer demand for better thermals--an essential characteristic for notebooks where board space is a premium and extended battery life is crucial." Elpida 512 Megabyte DDR2 SO-DIMMs (Part numbers: EBE EBE Excédent Brut d'Exploitation (French accounting) EBE Extraterrestrial Biological Entity EBE Evidence-Based Education EBE Electron Beam Evaporation (semi-conductor industry) EBE e-Business Engineering 52UD6AFSA-6E-E E-E End-To-End E-E Enterprise-E (Star Trek) E-E Emergency-Essential : PC2-5300, EBE52UD6AFSA-5C-E: PC2-4200, EBE52UD6AFSA-4A-E A-E, AE above-elbow; see under amputation. : PC2-3200) are available in three speed grades, DDR2-667 (CL=5-5-5), DDR2-533 (CL=4-4-4) and DDR2-400 (CL=3-3-3) respectively, and they are organized as 64M words x 64-bits x 2 Ranks. The modules are composed of 8 pieces of x16 512 Megabit DDR2 SDRAM produced using 100 nm process and assembled in 200-pin JEDEC-standard packages. The devices mounted on modules have a 1.8 Volt operation and a burst length of 4 or 8. Elpida 512 Megabyte DDR2 SO-DIMMs are currently available in samples. Volume production is expected in July 2005. |
|
||||||||||||||||||
Printer friendly
Cite/link
Email
Feedback
Reader Opinion