Dow Corning Files Second Suit Against TOK for Patent Infringement.
MIDLAND, Mich.--(BUSINESS WIRE)--July 9, 2001
Dow Corning Corp. filed a second lawsuit against Tokyo Ohka Kogyo Co. Ltd. (TOK) for alleged infringement of three patents relating to the use of hydrogen silsesquioxane (HSQ) resin technology and its use in the fabrication of electronic circuits and devices.
The suit, filed June 25, 2001, in Korea with the Yeoju Branch of the Suwon District Court, charges TOK with patent infringement on Korean Patent Nos. 95925 ("Metastable Silane Hydrolyzates and Process for their Preparation"); 95931 ("The Process for Forming a Protective Coating of a Silsesquioxane Resin by Using a Silane Hydrolyzate"); and 282685 ("Method for the Formation of a Silicon Oxide").
This action, in addition to an earlier lawsuit against TOK for infringement of the same patents, is part of a resolve to protect and enforce Dow Corning's patents. The original suit, filed July 18, 2000, in the United States with the Federal District Court for the Eastern District of Texas, is scheduled for trial April 29, 2002.
Dow Corning developed HSQ technology and has established a global distribution and support network for its commercialization as an improved dielectric material for use in electronic devices. The company holds approximately 100 U.S. Patents relating to materials and their use in the semiconductor industry.
"We have been unable to resolve this dispute through discussions with TOK, and so are being forced to bring this matter to the courts for resolution in appropriate jurisdictions around the world," said Mike Little, director, Dow Corning's Semiconductor Fabrication Materials business unit.
HSQ is sold by Dow Corning under the trade name FOx(R) Flowable Oxide. Purchasers of the product are granted usage rights as part of the label licensing agreement. The product was first used in a commercial semiconductor production process in 1994 for integrated circuits featuring 0.5-micron gate lengths. Market acceptance has continued to grow as FOx is now in use in 0.5- to sub-0.18-micron devices.
"We have continued to extend the capability of FOx to meet the needs of successive device generations by leveraging our years of experience and research with HSQ. Last year, we introduced XLK(TM) Spin-On Dielectric, a next-generation material for deep sub-micron device technology based on the same proven HSQ resin," said Little.
About Dow Corning's Semiconductor Fabrication Materials
Dow Corning's Semiconductor Fabrication Materials unit is heavily invested in and pursuing both spin-on and CVD low-k dielectric solutions for current and next generation semiconductor devices. For more information about how Dow Corning is leading the way to ultra-low k, visit http://www.lowkleader.com.
About Dow Corning
Dow Corning Corporation (http://www.dowcorning.com), which develops, manufactures and markets diverse silicon-based products, currently offers more than 10,000 products to customers around the world. Dow Corning is a global leader in silicon-based materials with shares equally owned by The Dow Chemical Company (NYSE:DOW) and Corning Incorporated (NYSE:GLW). More than half of Dow Corning's sales are outside the United States.
For product information, contact: Dow Corning Corporation
Customer Service Dept. P.O. Box 0994 Midland, Mich. 48686-0994 Phone: 989/496-4000 Toll-free: 800/346-9882 Phone: 989/496-6000 Toll-free: 800/346-9882 FAX: 989/496-4586 Web site: http://www.dowcorning.com/electronics Ref. no.: P-1153
Dow Corning and FOx are a registered trademarks of Dow Corning Corporation.
XLK is a trademark of Dow Corning Corporation.
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|Date:||Jul 9, 2001|
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