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Chartered's NanoAccess Offers Foundry-Proven 90-Nanometer Silicon Technologies for SoC Manufacturing.


Business Editors

MILPITAS, Calif. & SINGAPORE--(BUSINESS WIRE)--Sept. 18, 2003

Leading Foundry Open for Business at 90nm, Details Latest Phase of

Chartered/IBM Joint Silicon Delivery Milestones

Chartered Semiconductor Manufacturing Chartered Semiconductor Manufacturing SGX: C27 NASDAQ: CHRT (abbreviated CSM) is the world's fourth largest dedicated independent semiconductor foundry, with its headquarters and main operations located in the Woodlands Industrial Park, Kranji Singapore.  (Nasdaq:CHRT CHRT Canadian Human Rights Tribunal
CHRT Chert (lithological term)
CHRT Consolidated Human Resource Technology
 and SGX-ST:CHARTERED), one of the world's top three dedicated semiconductor foundries, today detailed the silicon deliverables for its NanoAccess(TM) system-on-chip (SoC) manufacturing technologies at the 90-nanometer (nm) node. Chartered's NanoAccess offerings are based on the semiconductor industry's process platform for 90nm being jointly developed by Chartered and IBM (International Business Machines Corporation, Armonk, NY, www.ibm.com) The world's largest computer company. IBM's product lines include the S/390 mainframes (zSeries), AS/400 midrange business systems (iSeries), RS/6000 workstations and servers (pSeries), Intel-based servers (xSeries) , two of the world's four leading foundries, and 65nm being jointly developed by Chartered, IBM and Infineon.

Chartered announced the immediate availability of the joint Chartered and IBM 90nm design manual and SPICE models to early adopters for design prototyping. Initial process qualification for both FTEOS and low-k dielectric dielectric (dī'ĭlĕk`trĭk), material that does not conduct electricity readily, i.e., an insulator (see insulation). A good dielectric should also have other properties: It must resist breakdown under high voltages; it should not  options is targeted for completion by the first quarter of 2004. To further facilitate 90nm design validation for leading-edge customers and intellectual property (IP) partners, Chartered is offering multi-project wafer (MPW MPW Macintosh Programmer's Workshop (Mac OS Software Development Environment)
MPW Multi Product Wafer
MPW Maine Photographic Workshops (Rockport, Maine)
MPW Multiple Plane Wave
MPW Multi-Purpose Workstation
) runs starting in October 2003. Chartered has qualified Dai Nippon Printing Dai Nippon Printing (大日本印刷 Dai Nippon Insatsu  Co., Ltd. (DNP DNP
n.
Deoxyribonucleoprotein; a complex of DNA and protein that usually yields DNA upon cell disruption and isolation.



DNP

2,4-dinitrophenol.
) for 90nm mask production. Toppan Printing Co., Ltd and its subsidiaries are currently under qualification.

Chartered's NanoAccess 90nm manufacturing technologies are supported with a comprehensive 90nm design ecosystem, which includes open access to third-party design libraries and tools, IP components, as well as design and manufacturing-related services. Details regarding Chartered's NanoAccess Alliance and the schedule of joint design deliverables are outlined in a separate announcement also issued today. (See September 18, 2003 press release, "Chartered Launches NanoAccess Alliance to Enable Chip Design on Foundry-Proven 90nm Process Platform")

"IBM is the recognized leader in advanced semiconductor technology given its sustained record of innovation, and our joint development efforts are already producing results for early adopters of 90nm technologies," said Dr. S Dr.

Doctor.


dr.

dram.
.C. Sun, senior vice president of technology development at Chartered. "With our NanoAccess 90nm technologies, we're providing access to the industry's most proven process platform through a dedicated foundry services model and economies of scale that will enable more companies and IP providers to accelerate their move to 90nm."

"By working together with Chartered in creating our 90nm solutions, we are significantly expanding the market reach for our technology investments," said Dr. Bernard S Ber·nard , Claude 1813-1878.

French physiologist noted for his study of the digestive and nervous systems.
. Meyerson, vice president and chief technologist, IBM Technology Group. "Chartered has demonstrated the ability to successfully productize technology for both fabless suppliers and IDMs. As a result of our alliance, we can focus additional IBM resources on delivering more value to our customers through added features at 90nm, as well as devote more resource to new technologies at 65nm and beyond."

Chartered NanoAccess 90nm Technologies

The complex physics and integration benefits of 90nm geometries require a systems approach to silicon development and manufacturing. Chartered's 90nm strategy is to provide a complete design-to-manufacturing platform and dual-sourcing flexibility based on its joint development and reciprocal manufacturing agreement with IBM. Compatibility is built in at the process, design and mask levels, and in Chartered's Fab 7 with a "copy smart" equipment set to further enhance yield optimizations for Chartered's NanoAccess 90nm technologies. In addition, Chartered is taking measures to accommodate small batch processing (1) Performing a particular operation automatically on a group of files all at once rather than manually opening, editing and saving one file at a time. For example, graphics software that converts a selection of images from one format to another would be a batch processing utility.  for companies with lower volume supply needs.

"IBM's unique research capability puts them in a class by themselves in this new Nano Age," said G. Dan Hutcheson, president of VLSI VLSI: see integrated circuit.


(1) (Very Large Scale Integration) Between 100,000 and one million transistors on a chip. See SSI, MSI, LSI and ULSI.

(2) (VLSI Technology, Inc., Tempe, AZ, www.semiconductors.
 Research. "Chartered's understanding of the foundry service model can proliferate pro·lif·er·ate
v.
To grow or multiply by rapidly producing new tissue, parts, cells, or offspring.
 the jointly developed Chartered/IBM nanotechnology platform, and help seed market demand for the higher volume SoC applications such as high-performance set-top boxes, digital televisions, networking devices, and digital cellular phones."

Chartered's NanoAccess 90nm technologies feature up to nine layers of copper metal for signal routing, multiple threshold voltage The threshold voltage of a MOSFET is usually defined as the gate voltage where a depletion region forms in the substrate (body) of the transistor. In an NMOS the substrate of the transistor is composed of p-type silicon which has more positively charged electron holes compared to  transistor options, full low-k offering for performance critical applications, and FTEOS for balanced cost and performance implementations. An optional Triple Gate Oxide capability provides additional avenues for further optimizing power and performance.

NanoAccess Deliverables & Availability

Chartered's NanoAccess silicon deliverables include a 90nm design manual with performance and reliability design rules, electrical parameters, and silicon characterization guidelines. It supports Chartered's standard suite of mixed-signal and embedded memory modules, as well as multiple transistor configurations for flexibility in designing SoCs with peak performance, low leakage devices needed for mobile/handheld applications.

Transistor options include Nominal, High Performance (HP) and Low Power (LP) devices with input/output operating voltages of 3.3, 2.5, 1.8, 1.5 or 1.2 volts. Core transistor operating voltages include 1.0 or 1.2 volts. Initial offerings include multiple threshold voltages in the Nominal option. The LP transistor, which has a typical leakage (I-off) of 0.02 nanoamps per micron, is well suited for power-sensitive circuits in a chip. For speed critical chips, the HP transistor provides a typical ring oscillator A ring oscillator is a device composed of an odd number of NOT gates whose output oscillates between two voltage levels, representing true and false. The NOT gates, or inverters, are attached in a chain; the output of the last inverter is fed back into the first.  (RO) delay of 7.4 picoseconds per stage. The design manual will be updated in fourth quarter of 2003 to include HP devices.

The SPICE simulation models currently available to Chartered 90nm customers and IP partners were developed using a methodology that isolates and partitions numerous process variables. This streamlines both initial development cycles on 200mm wafers and migration to 300mm.

About Chartered

Chartered Semiconductor Manufacturing, one of the world's top three dedicated semiconductor foundries, is forging a customized approach to outsourced semiconductor manufacturing by building lasting and collaborative partnerships with its customers. The Company provides flexible and cost-effective manufacturing solutions for customers, enabling the convergence of communications, computing and consumer markets. In Singapore, Chartered operates five fabrication fabrication (fab´rikā´shn),
n the construction or making of a restoration.
 facilities and has a sixth fab, which will be developed as a 300mm facility.

A company with both global presence and perspective, Chartered is traded on both the Nasdaq Stock Market Nasdaq stock market

The first electronic stock market listing over 5000 companies. The Nasdaq stock market comprises two separate markets, namely the Nasdaq National Market, which trades large, active securities and the Nasdaq Smallcap Market that trades emerging growth companies.
 (Nasdaq:CHRT) and on the Singapore Exchange “SGX” redirects here. For other uses, see SGX (disambiguation).

Singapore Exchange Limited SGX: S68 (SGX) is the stock exchange in Singapore.

SGX was formed on December 1 1999, following the merger of two established and well-respected financial
 (SGX-ST:CHARTERED). Chartered's 3,500 employees are based at 11 locations around the world. Information about Chartered can be found at www.charteredsemi.com.

Chartered Safe Harbour Statement under the provisions of the United States United States, officially United States of America, republic (2005 est. pop. 295,734,000), 3,539,227 sq mi (9,166,598 sq km), North America. The United States is the world's third largest country in population and the fourth largest country in area.  Private Securities Litigation Reform Act The Private Securities Litigation Reform Act of 1995 (PSLRA) implemented several significant substantive changes affecting certain cases brought under the federal securities laws, including changes related to pleading, discovery, liability, class representation and awards fees and  of 1995

This news release may contain forward-looking statements forward-looking statement

A projected financial statement based on management expectations. A forward-looking statement involves risks with regard to the accuracy of assumptions underlying the projections.
, as defined in the safe harbor Safe Harbor

1. A legal provision to reduce or eliminate liability as long as good faith is demonstrated.

2. A form of shark repellent implemented by a target company acquiring a business that is so poorly regulated that the target itself is less attractive.
 provisions of the U.S. Private Securities Litigation Reform Act of 1995. These forward-looking statements are subject to certain risks and uncertainties, which could cause actual results to differ materially. Among the factors that could cause actual results to differ materially are changes in market outlook and trends; customer demands, the rate of semiconductor market recovery; economic conditions in the United States as well as globally; the performance level of and technology mix in our fabrication facilities; the successful implementation of our partnership, technology and supply alliances and competition. Although we believe the expectations reflected in such forward-looking statements are based upon reasonable assumptions, we can give no assurance that our expectations will be attained. In addition to the foregoing factors, a description of certain other risks and uncertainties which could cause actual results to differ materially can be found in the section captioned "Risk Factors" in our Annual Report on Form 20-F and our First Quarter 2003 Quarterly Report on Form 6-K filed with the U.S. Securities and Exchange Commission. You are cautioned not to place undue reliance on these forward-looking statements, which are based on the current view of management on future events. We undertake no obligation to publicly update or revise any forward-looking statements, whether as a result of new information, future events or otherwise.

NanoAccess is a trademark of Chartered Semiconductor Manufacturing. All other trademarks are the property of their respective owners.
COPYRIGHT 2003 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2003, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

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Publication:Business Wire
Geographic Code:1USA
Date:Sep 18, 2003
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