Canon Sets New Tone with Latest Lithography Roadmap at SPIE 03; Technology Gap Over Says Lithography Leader.

Business Editors/High-Tech Writers

SPIE Microlithography 2003

SAN JOSE, Calif.--(BUSINESS WIRE)--Feb. 24, 2003

Showcases Updates to FPA 6000 Platform,

Spanning Three Generations of Lithography;

Highest Return on Lithography Investment

(ROLI) Central Goal Says U.S. Management

Performance enhancing productivity improvements to its new FPA 6000 platform that spans three generations, a roadmap surpassing chipmakers' technology needs, a strong declaration that it's on track with its 157 nm lithography program and a renewed commitment to the U.S. marketplace reflected an upbeat tone as Canon, a leader in lithography, illustrated the latest advances to its optical lithography roadmap for semiconductors at the opening of the annual SPIE Microlithography 2003 exposition in Santa Clara, California.

The Semiconductor Equipment Division of Canon U.S.A., Inc., a subsidiary of Canon Inc. (NYSE: CAJ), offered up a wealth of new information on its roadmap, illustrating major advances in the stage speed and synchronization of its new FPA 6000 platform. The 6000 is designed to offer a bridge between 193 nm and 157 nm wavelength lithography taking chipmakers to 45 nm feature sizes, which is in line with industry roadmap needs and customer expectations. Ray Morgan, strategic marketing manager of the Semiconductor Equipment Division of Canon U.S.A., stated that these developments and others are driven largely by Canon's renewed strategy of enabling customers to attain the highest return for their lithography investment.

Phil Ware, senior fellow of lithography strategy with the Semiconductor Equipment Division of Canon U.S.A., said the company's new 6000 platform spans three generations of lithography from 248 nm through 193nm to 157 nm and it provides customers with extremely high productivity on a very compact body. The new 6000 platform offers scanning speeds of 500 mm per second reinforced by an innovative counter balancing technique that helps assure high wafer throughput of more than 140 300 mm wafers per hour and more than 170 200 mm per hour.

System                 FPA-6000 AS4 Scanner     FPA-6000 ES5 Scanner
----------------------------------------------------------------------
Exposure Wavelength          193nm (ArF)               248nm (KrF)
----------------------------------------------------------------------
Wafer Size              300mm (200mm Capable)         300mm (200mm
                                                         Capable)
----------------------------------------------------------------------
Resolution                 less than 80nm           less than 110nm
----------------------------------------------------------------------
NA                           0.85 to 0.55               0.80 to 0.50
                          (Automatic Variable)          (Automatic
                                                         Variable)
----------------------------------------------------------------------
Reticle Size                                  .6 inch
----------------------------------------------------------------------
Reduction Ratio                                 4:1
----------------------------------------------------------------------
Field Size                                 26mm x 33mm
----------------------------------------------------------------------
Light Source                  ArF (193nm)                KrF (248nm)
                             Excimer Laser              Excimer Laser
----------------------------------------------------------------------
Resolution                     less than                less than or
                            or equal to 80nm           equal to 110nm
----------------------------------------------------------------------
Overlay Accuracy               less than                 less than
                            or equal to 18nm         or equal to 18nm
----------------------------------------------------------------------
Throughput                                140 wph (300mm)
                                          170 wph (200mm)
----------------------------------------------------------------------

"The FPA 6000 is a truly unique solution for our customers, whether DRAM or logic because it matches our customers' requirements by attaining the highest productivity with no compromise on CD control, throughput and other key benefits such as overlay," noted Tommy Oga, chief applications process engineer, Semiconductor Equipment Division, Canon U.S.A.

"Our roadmap, and in particular the 6000 platform, is designed to account for current and future customer priorities by offering a platform that is expected to take optical lithography to at least the 45nm-node," added Mr. Ware. "The 6000 system has been optimized for very low k1 lithography. In fact, all versions of the 6000 platform will feature low levels of lens aberration and scanning synchronization errors (MA and MSD), enhanced real-time focusing and leveling, improved alignment accuracy, a wide array of NA and illumination conditions and a short reticle change time for double exposures."

Canon believes that no real technology gap in lithography currently exists among the three main suppliers.

"This is a highly competitive market and the most critical of all process steps for our IC customers," said Kiyoshi Morishima, vice president and general manager, Semiconductor Equipment Division, Canon U.S.A. "We believe that all companies are on the same wavelength when it comes to technology. We all have aggressive 193, 157 and NGL programs and we are all grappling with the same technical challenges such as pellicle and resist issues on 157 and cost and technical issues in general with EUV.

"The key to meeting customers' needs lies in attaining the maximum productivity possible where process know-how and collaboration with other partners is essential," added Mr. Morishima. "Our work with Applied Materials at the Maydan Process Module Technology Center in Santa Clara, California, and our work with Tokyo Electron are two examples of this needed cooperation. Our resources have and will be committed to meeting the productivity challenge for our customers here in the United States and overseas and it is that very goal that makes our 6000 platform a tremendous accomplishment in our opinion."

Canon believes that 2003 will offer growth opportunities for it and the semiconductor industry in general.

"We are intent on making market share gains in 2003 and this is consistent with our current backlog, being fueled by strong demands for our new 6000 KrF and ArF systems," commented Mr. Morgan, who also stated that Canon is well on track with its 157 nm program although customer needs will dictate ultimate timing. He said that Canon will be ready to ship the first 157 tools later in the year and that the company will continue to collaborate aggressively with partners in the U.S. and Japan on challenges pertaining to EUV implementation of which production tools are slated for 2007.

At SPIE, Canon (booth #936) will present key technical papers during the show:

-- Development status of a 157nm full field Scanner.

-- LPP Based Reflectometer for Characterization of EUV Lithography System.

-- Evaluation of various pitches 100nm contact holes applying IDEALSmile with high NA KrF Scanner.

-- A new lens barrel structure utilized on the FPA-6000AS4 and its contribution to the lens performance.

-- The Vortex Via Process: Analysis and Mask Fabrication for CDs less than 80nm

-- Method to generate CD control that meets Sub-30nm Poly-Silicon Gate Requirements

-- 0.85NA ArF Exposure System and Performances

-- Contact Printing to the 45 nm Node Using a Binary Mask and 248 nm Lithography

-- Next Generation Scanner to sub-100nm Lithography

-- New Criteria about the topography of W-CMP wafer's alignment mark

The Semiconductor Equipment Division of Canon U.S.A. supplies step-and-repeat and step-and-scan photolithography tools and solutions used in the design and fabrication of semiconductor devices, flat panel displays, microelectromechanical systems (MEMS) and read/write heads for magnetic storage systems.

Canon U.S.A., Inc. delivers consumer, business-to-business, and industrial imaging solutions. In 2001, the Company was listed as one of Fortune's Most Admired Companies in America, and was ranked #41 on the Business Week list of "Top 100 Brands." Its parent company Canon Inc. (NYSE:CAJ) is a top patent-holder of technology, ranking third overall in the U.S. in 2001, with global revenues of $22 billion. Canon U.S.A. employs approximately 11,000 people at over 30 locations. For more information, visit www.usa.canon.com.

Canon U.S.A. Web site: http://www.usa.canon.com/steppers