Canon's 157 nm Lithography Program on Track; First 157 nm Systems Ready to Ship on 5000 Platform Q4 2003.Business Editors/High-Tech Writers SPIE SPIE International Society for Optical Engineering SPIE Society of Photo-Optical Instrumentation Engineers SPIE Source Path Isolation Engine SPIE Special Purpose Insertion Extraction SPIE Software Process Improvement Experimentation SPIE Standard Protocols in Effect Microlithography 2003 SAN JOSE San Jose, city, United States San Jose (sănəzā`, săn hōzā`), city (1990 pop. 782,248), seat of Santa Clara co., W central Calif.; founded 1777, inc. 1850. , Calif.--(BUSINESS WIRE)--Feb. 24, 2003 The Semiconductor Equipment Division of Canon U.S.A., Inc., a subsidiary of Canon Inc. (NYSE NYSE See: New York Stock Exchange : CAJ CAJ Canadian Association of Journalists CAJ Christliche Arbeiterjugend (German Young Christian Workers) CAJ China Academic Journals CAJ Christian Academy in Japan CAJ Canaima, Venezuela (Airport Code) ), today announced that its 157 nm lithography program for semiconductor manufacturing is still on track and that it expects the first tools ready to be shipped in the second half of 2003. Speaking at the opening of the annual SPIE Microlithography 2003 exposition in Santa Clara, California Santa Clara, California (IPA: /ˌsæntəˈklærə/) , founded in 1777 and incorporated in 1852, is a city in Santa Clara County, in the U.S. state of California. , (Canon booth #936), Phil Ware, senior fellow of lithography strategy with the Semiconductor Equipment Division of Canon U.S.A., cautioned that while key technical issues such as calcium fluoride, bifringence and purity obstacles as well as purging systems appear to have been addressed, other major technical challenges need to be overcome, including development of pellicles solutions and suitable photoresist processes. "Our 157 nm program is well on track and is slated to address semiconductor producers' needs at the 65 nm node and below," said Ray Morgan, strategic marketing manager, Semiconductor Equipment Division, Canon U.S.A. "While the industry roadmap calls for insertion of 157 nm wavelengths at the 65 nm node, Canon believes that the insertion point will ultimately be determined by customer need and the ability to extend current optical solutions. Already improvements in lens numerical apertures (NA) and resolution enhancement technology
Resolution enhancement technology (RET) is a form of image processing technology used to manipulate dot characteristics popular among laser printer and inkjet printer have enabled the industry to drive 248 nm with krypton krypton (krĭp`tŏn) [Gr.,=hidden], gaseous chemical element; symbol Kr; at. no. 36; at. wt. 83.80; m.p. −156.6°C;; b.p. −152.3°C;; density 3.73 grams per liter at STP; valence usually 0. fluoride excimer laser A gas laser in which a very short electrical pulse excites a mixture containing a halogen such as fluorine and a rare gas such as argon or krypton. It produces a brief, intense pulse of ultraviolet light. sources (KrF) below 100 nm and it is expected that 193 nm lithography with an argon argon (är`gŏn) [Gr.,=inert], gaseous chemical element; symbol Ar; at. no. 18; at. wt. 39.948; m.p. −189.2°C;; b.p. −185.7°C;; density 1.784 grams per liter at STP; valence 0. fluoride light source (ArF) will extend all the way down to the 65 nm." Canon is confident that it and the industry in general will eventually resolve outstanding technical issues and that Canon's program will remain on track. "We will be ready to ship our beta tool, FS1, later this year," declared Mr. Ware. "It will be launched on our highly successful 5000 platform, designated the FPA-5800FS1 and will feature 0.80 NA projection optics with a 5x reduction ratio." Canon will follow that with its production tool, the FS2, which will be ready for shipment in early 2005 and will be launched on its new high productivity single stage FPA 1. (hardware) FPA - floating-point accelerator. 2. (programming) FPA - Function Point Analysis. 6000 platform, which is designed to span three generations of lithography from 248 nm through 193 nm to 157 nm.
FPA-5800FS1 F2 scanner
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Numerical Aperture (Max.) 0.80
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Reduction Ratio 1:5
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Field Size 22mm x 26mm
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Exposure Wavelength 157nm
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Reticle Size .6" to 0.25"
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Pellicle Hard pellicle, 0.8mm thick; or soft
pellicle
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Wafer Size 300mm or 200mm
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Optics Design Catadioptric System
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Illumination Condition Automatically Changeable:
Normal, Annular, and Quadrupole
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Laser Bandwidth FWHM 0.7 to 1.0pm
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Aberration Control Active Compensation System
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The Semiconductor Equipment Division of Canon U.S.A. supplies step-and-repeat and step-and-scan photolithography tools and solutions used in the design and fabrication fabrication (fab´rikā´sh n the construction or making of a restoration. of semiconductor devices, flat panel displays, microelectromechanical systems (MEMS (MicroElectroMechanical Systems) Tiny mechanical devices that are built onto semiconductor chips and are measured in micrometers. In the research labs since the 1980s, MEMS devices began to materialize as commercial products in the mid-1990s. ) and read/write heads for magnetic storage systems. Canon U.S.A., Inc. delivers consumer, business-to-business, and industrial imaging solutions. In 2001, the Company was listed as one of Fortune's Most Admired Companies in America, and was ranked #41 on the Business Week list of "Top 100 Brands." Its parent company Canon Inc. (NYSE:CAJ) is a top patent-holder of technology, ranking third overall in the U.S. in 2001, with global revenues of $22 billion. Canon U.S.A. employs approximately 11,000 people at over 30 locations. For more information, visit www.usa.canon.com. |
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