CREE MICROWAVE UNVEILS HIGHER-GAIN SIC RF MESFET.Cree Microwave, Inc., a subsidiary of Cree, Inc. (NASDAQ NASDAQ in full National Association of Securities Dealers Automated Quotations U.S. market for over-the-counter securities. Established in 1971 by the National Association of Securities Dealers (NASD), NASDAQ is an automated quotation system that reports on :CREE), Durham, N.C., has announced that its 2nd generation 48 V silicon carbide (SiC) MESFET See FET. process has been released to production. The initial product based on this new process is the CRF-24010, a Class A/B A/B Airborne A/B Afterburner (jet engines) A/B Air Blast A/B Answerback A/B Auto-brake A/B Air Bus A/B Afterburning 10 W SiC MESFET with a minimum gain of 13 dB at 2 GHz, which is greater than 3 dB higher than previous SiC MESFETs. This device has an IM3 of -31 dBc at a peak envelope power Peak envelope power is the average power supplied to the antenna transmission line by a transmitter during one radio frequency cycle at the crest of the modulation envelope, under normal operating conditions. of 10 W, operates from DC to 2.7 GHz, and has multi-octave instantaneous bandwidth, making it ideal for a variety of broadband large signal applications. The device has passed initial internal product reliability tests and is available for customer sampling. "We have received strong interest in the use of SiC RF MESFETs for a variety of very wide bandwidth communications applications, and the much higher gain of this new process should allow for even better performance and wider bandwidths to be obtained," stated John Palmour, Cree's executive vice president of Advanced Devices. "The wide bandwidth capability is due to the much higher output impedance for a given power level for SiC as compared to silicon or gallium arsenide RF devices. An additional benefit of this new Class A/B SiC MESFET process versus our previous Class A process is that the power added efficiency under rated conditions increases from 38% to greater than 44% at P1dB." Cree Microwave designs, manufactures and markets a complete line of high- quality, customizable and cost-effective radio frequency (RF) power semiconductors, the critical component utilized in building wireless power amplifiers for cellular and personal communications services See PCS. (PCS (1) (Personal Communications Services) Refers to wireless services that emerged after the U.S. government auctioned commercial licenses in 1994 and 1995. This radio spectrum in the 1. ) infrastructure. The company designs and manufactures laterally diffused metal-oxide silicon (LDMOS LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOS Lateral DMOS LDMOS Lightly-Doped Drain Metal-Oxide Semiconductor LDMOS Lateral Diffusion Mosfet ) and bipolar power semiconductors for operation up to 2.4 GHz, as well as wide bandgap semiconductor RF power devices. Cree Microwave's operating headquarters are at 160 Gibraltar Court, Sunnyvale, California 94089. For more information, visit http://www.creemicrowave.com or call 408/745-5700. |
|
||||||||||||||||
Printer friendly
Cite/link
Email
Feedback
Reader Opinion