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BTA Technology Obtains Broad Foundry Support for Modeling Technology; HVMOS Acknowledged as Important Model for Flash Memory and Power IC Designs.


SAN JOSE, Calif.--(BUSINESS WIRE)--July 12, 1999--

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 Technology Inc., the company that provides innovative design solutions to ensure deep-submicron performance, today announced that its HVMOS device model for products using high voltage transistors, such as embedded Flash memory, power switching and regulators, LCD drivers etc., is now being supported by leading foundries including Chartered Semiconductor, UMC Group, and World Semiconductor Manufacturing Corp.

Dr. Zhihong Liu, CEO and president of BTA Technology commented, "BTA is continuously working to ensure our customers have the foundry resources to utilize our innovative product offerings. As UMC Group, Chartered and WSMC WSMC - Washington State Mathematics Council
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 are now supporting HVMOS, along with other leading-edge BTA product offerings, we see this as testament to the strength of our technology."

The HVMOS model, developed in partnership with Sony (Japan) and Cadence Design Systems (NY:CDN), offers better accuracy to model high-voltage devices such as Flash memory with asymmetric LDD LDD - Land Development Desktop (Autodesk AutoCAD)
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 structures and LCD drivers, CCD, E2PROM E2PROM - Electrically Erasable Programmable Read-Only Memory and LDMOS. HVMOS helps ensure that products with high voltage transistors in design can be simulated and fine-tuned early in the development cycle with greatly improved accuracy.

"We are pleased to offer the model parameters for HVMOS to our customers, as it should greatly aid them with the simulation of their complex flash memory and power IC designs. As such, it makes an excellent addition to our portfolio of high-quality models," said Richard Chang, president at WSMC.

"WSMC is committed to shorten our customers' design cycles. Through our Si-Net Program, customers can gain access to WSMC Si verified models, IPs and Design Services. We welcome BTA aboard to be a member of our Si-Net."

BTA introduced the HVMOS model in March of 1998. At that time the model had been implemented in Cadence's Spectre. This model is now available in Avant!'s Star-Hspice circuit simulator and is being supported by a total of three foundries.

Pricing and Availability

BTA's HVMOS model is available from BTA at a U.S.-list price of $10,000. HVMOS model parameter extraction for SPICE simulation is available as a module for BSIM BSIM - Berkeley Short-Channel IGFET Model
BSIM - Big Sur International Marathon (California)
 Pro, BTA Technology's SPICE model extractor. HVMOS characterization services are also available from BTA Technology's BTA Labs.

About BTA Technology

BTA Technology Inc. provides innovative design solutions to ensure deep-submicron performance. The company's simulation tools ensure first-silicon success by simulating the effects of hot-carrier and device mismatch on circuit performance. These effects become vital for achieving accuracy in today's designs, especially those with geometries of 0.18 micron and below.

In addition to design tools, BTA offers a comprehensive line of modeling tools. These tools emphasize accuracy, ease of use, and tight integration of advance modeling capabilities for SPICE DC/AC, interconnect, RF, noise, and reliability model parameter extraction. Lastly, BTA provides complete consulting services through BTA Labs which is focused on solving modeling challenges for deep-submicron technology.

The company is headquartered at 1982A Zanker Rd., San Jose, Calif. 95112, phone 408/451-1210, fax 408/451-1211, email info@btat.com, web http://www.btat.com

Note to Editors: BTA Technology and HVMOS are trademarks of BTA Technology. All other trademarks and registered trademarks are the property of their respective owners.
COPYRIGHT 1999 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 1999, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

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Publication:Business Wire
Date:Jul 12, 1999
Words:523
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