Axcelis Introduces HC3 High Current Implanter For 300mm Manufacturing.

Business/Technology Editors

BEVERLY, Mass.--(BUSINESS WIRE)--June 18, 2001

Completes 300mm Implant Product Family, Meeting all Implant

Application Requirements Beyond 100 Nanometers

Axcelis Technologies, Inc. (NASDAQ: ACLS), has extended its ion implant leadership in the 300mm arena with the introduction of the Axcelis HC3 300mm high current implantation system featuring a new high-transmission beamline. Rounding out Axcelis' line of 300mm implanters, the Axcelis HC3 addresses volume 300mm production needs for ultra shallow junction formation beyond the 100nm technology node.

"The Axcelis HC3 addresses the unique needs of the fast approaching 300mm and sub-100nm technology node era," said David Duff, director of marketing, ion implantation and rapid thermal processing group of Axcelis. "It combines robust, production-proven technology with a new advanced beamline that delivers the enhanced low energy beam current necessary for 300mm ultra shallow junction production. Following in the footsteps of the industry-leading 200mm GSD Series, the Axcelis HC3 is expressly designed to meet the simultaneous challenges of higher throughput and improved process control to increase fab output and reduce die cost."

Duff also commented, "When used in conjunction with Axcelis' new Summit 300XT RTP platform for ultra shallow junction formation, the resulting superior uniformity and repeatability ensure both technology node alignment and manufacturing alignment for volume production."

In a separate announcement today, Axcelis introduced the new Summit 300XT rapid thermal processing system.

Axcelis HC3

The Axcelis HC3 is part of a co-development effort with Axcelis' joint venture partner SEN (Sumitomo Eaton Nova) and represents second-generation 300mm high current technology. The Axcelis HC3 delivers reliability, state-of-the-art integrated process control and exceptional productivity for 300mm chip manufacturing. The system features Axcelis' field-proven multi-wafer 300mm endstation and an enhanced high transmission beamline with boosted low energy beam current and an extended operating range from 0.2 to 80 keV. The new beamline features proprietary electron confinement technology, which reduces low energy beam blowup induced by space charge. This new technology delivers low energy beam current increases of 20-200% to the wafer without adding moving parts or complex assemblies. The system also provides the capability to run As2 and P2 dimer species, which further increases low energy n-type beam currents by approximately 50%. When combined with Axcelis' in situ wafer-repositioning technology, the new HC3 increases its commanding competitive advantage for multi-segment implants or `quads.' This results in the tightest possible process control with throughput more than 50% higher than competing systems for these leading-edge implant applications.

The HC3's multi-wafer handling system, the industry's fastest and most reliable, complements the unique two access process chamber, resulting in the highest beam utilization for any high current implanter available. With this unparalleled ion beam duty cycle, wafer-handling overhead is minimized, allowing for incremental improvements to the beam current without paying penalties for a slower architecture.

An enhanced real-time closed loop dosimetry system used in conjunction with new technology in the process chamber improves dose control and reduces cross-contamination to accommodate advanced technology roadmap requirements. The patented closed loop dose control system is the only high current dosimetry technology available with continuous control over the entire wafer during ion beam processing. This capability becomes more important in 300mm wafer fabs where wafer area increases by over a factor of two and process control requirements are tighter. As with all Axcelis ion implanters, the Axcelis HC3 incorporates Axcelis' next-generation Implant Control System, which increases availability and throughput by allowing engineers and operators to run multiple applications concurrently with high volume during production.

The Axcelis 300mm Ion Implantation Product Line

The Axcelis family of 300mm products includes a complete package of next-generation features built on a foundation of existing, production-proven 200mm technology. Customers who have developed processes on Axcelis' 200mm platforms will enjoy the same benefits at 300mm - with minimal risk, maximum productivity, high reliability, low cost of ownership, advanced automation, and a high degree of system commonality. In addition to the HC3, the powerful, three-product set includes the MC3 for medium current applications and the HE3 for high energy applications. The platform suite utilizes both single and multi wafer designs, to ensure both exceptional productivity and robust process performance. The 300mm family covers the entire applications range - delivering superior process performance for existing and emerging implant applications. Extendible beyond the 100nm technology node, the Axcelis 300mm suite of products offers enabling technology and maximum return on capital equipment investment.

The Axcelis HC3 technology will be on display at the SEMICON West 2001 tradeshow being held July 16th-18 at San Francisco's Moscone Center. Customer and press are invited to visit the Axcelis booth, number 734 in the South Hall during the show.

About Axcelis Technologies, Inc.

Axcelis Technologies, Inc., headquartered in Beverly, Massachusetts, provides innovative, high-productivity manufacturing solutions for the semiconductor industry. Axcelis is dedicated to the design and manufacture of high current, medium current and high energy ion implantation equipment; rapid thermal processing systems; and photostabilization and photoresist stripping equipment. Axcelis Technologies has manufacturing facilities in Beverly and Rockville, Maryland, as well as in Toyo, Japan through its joint venture Sumitomo Eaton Nova. The Company's Internet address is http://www.axcelis.com.