Applied Materials Strengthens Leadership in 300mm Copper Barrier/Seed with 100th System Shipment.SANTA CLARA, Calif. -- Applied Materials, Inc. today announced that it has shipped over 100 Applied Endura(R) CuBS systems to 300mm fabs, including systems to all chipmakers engaged in sub-90nm production or development. Introduced in 1998, the Endura CuBS is the leading PVD PVD abbr. peripheral vascular disease PVD Peripheral vascular disease, see there (1) system for depositing the tantalum tantalum (tăn`tələm) [from Tantalus], metallic chemical element; symbol Ta; at. no. 73; at. wt. 180.9479; m.p. 2,996°C;; b.p. 5,400±100°C;; sp. gr. 16.65 at 20°C;; valence +2, +3, +4, or +5. nitride (TaN) barrier and copper seed layers that are critical to fabricating copper interconnect structures. "Through continued advances in PVD technology, we've extended our technical and market leadership in barrier/seed from 130nm to the 65nm chip generation, and our latest SIP EnCoRe(TM) II barrier/seed technology is the only one being used for 45nm at the largest and most technically advanced IDMs and foundries," said Dr. Farhad Moghadam, senior vice president and general manager of Applied Materials' Thin Films Product Business Group. "This leading barrier/seed technology is a key part of our copper/low k interconnect solutions, which cover all of the deposition, etch and CMP CMP (cytidine monophosphate): see cytosine. (1) (CMP Media LLC, Manhasset, NY, www.cmp.com) Part of United Business Media, CMP is a leading integrated media company that offers a wide variety of publications and services in the information (1) technologies involved in interconnect fabrication. Our extensive knowledge of the fully integrated process flow gives us a unique ability to help customers quickly develop and ramp their next-generation interconnects." In late 2004, the Applied Endura CuBS system was enhanced with leading-edge SIP EnCoRe II chambers that extend PVD technology to the 45nm node and beyond. These chambers feature a novel sputtering A popular method for adhering thin films onto a substrate. Sputtering is done by bombarding a target material with a charged gas (typically argon) which releases atoms in the target that coats the nearby substrate. It all takes place inside a magnetron vacuum chamber under low pressure. source that deposits ALD ALD abbr. adrenoleukodystrophy ALD, n.pr See adrenoleukodystrophy. ALD aldolase. (1)-like, thin conformal films, even at the bottom of very deep, small via holes. Applied's SIP EnCoRe II technology also cuts consumables cost by increasing copper target lifetime over 2x (to over 30,000 wafers) with the industry's lowest defect levels. Numerous systems with SIP EnCoRe II process chambers are already being used by chipmakers in North America, Europe, Asia and Japan. Applied Materials, Inc. (Nasdaq: AMAT AMAT Applied Materials (stock symbol) AMAT Average Memory Access Time AMAT Automatic Message Accounting Transmitter AMAT Anti-Materiel (bomb or mine) AMAT Ageing Management Assessment Team ), headquartered in Santa Clara, California Santa Clara, California (IPA: /ˌsæntəˈklærə/) , founded in 1777 and incorporated in 1852, is a city in Santa Clara County, in the U.S. state of California. , is the largest supplier of equipment and services to the global semiconductor industry. Applied Materials' web site is www.appliedmaterials.com
(1) PVD: physical vapor deposition
CMP: chemical mechanical polishing
ALD: atomic layer deposition
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