Applied Materials Releases Industry's First Integrated ALD/PVD Copper Barrier/Seed System.

Business Editors/High-Tech Writers

NOTE TO MEDIA: Multimedia assets available

SANTA CLARA, Calif.--(BUSINESS WIRE)--July 22, 2002

Breakthrough ALD Barrier Technology Enables Leap to

65nm-Generation Interconnects

Applied Materials, Inc. announces the industry's first integrated Atomic Layer Deposition/Physical Vapor Deposition (ALD/PVD) product, the Endura(R) iCuB/S(TM) Integrated Cu Barrier/Seed system, for depositing the critical barrier and seed layers in 65nm-generation and beyond copper interconnects. Using breakthrough ALD technology, the iCuB/S system provides the key to future copper nano-chips by enabling an ultrathin, conformal tantalum nitride (TaN) barrier layer that is compatible with advanced low (kappa) dielectric films.

"The Endura iCuB/S system extends our comprehensive line of copper metallization solutions beyond the 90nm generation," said Dr. Fusen Chen, vice president and general manager of Applied Materials' Copper, PVD and Integrated Systems Business Group. "Chipmakers have universally embraced our copper PVD technology for production and development applications, which is validated by the more than 200 barrier/seed systems in use worldwide.

"The new iCuB/S system continues this leadership by providing customers with a unique, pre-integrated ALD/PVD solution designed to ease their transition to the 65nm design node," continued Dr. Chen. "In addition to leading-edge ALD technology, the iCuB/S product features Applied Materials' most advanced SIP EnCoRe(TM) PVD seed technology on the highly reliable Endura XP platform for ensured system productivity."

The TaN barrier layer is critical to achieving reliable copper structures. Tighter geometries of the 65nm node require that the barrier layer be exceptionally thin to maintain low interconnect resistivity, while also providing good barrier properties and good dielectric-to-metal integrity. ALD technology, which deposits a single atomic layer at a time, enables such ultra-thin layers with uniform coverage on small, 65nm features. However, the challenge is in designing a TaN ALD process that meets these performance, integration and manufacturability requirements.

According to Dr. Ken Monnig, associate director of Interconnect at International SEMATECH, "As the industry transitions to sub-100nm chip generations, integration of the barrier layer is one of the most difficult challenges we face. The minimal area available in high aspect ratio vias and trenches demands much thinner barrier films with exceptional step coverage, and these films must be compatible with advanced low (kappa) materials to ensure optimal electrical performance."

The Endura iCuB/S system's TaN chamber deposits an ultra-thin barrier layer with virtually 100 percent side and bottom coverage. In addition to providing a superior interface with the PVD seed layer, the ALD TaN film is an effective barrier for integration with advanced low (kappa) dielectrics. Electrical performance of ALD TaN has already been demonstrated with customers when integrated with Black Diamond(TM) low k film in Applied Materials' Process Module Technology Center.

In addition to meeting the technical requirements of the 65nm generation, Applied Materials' revolutionary ALD TaN chamber enables the manufacturing performance that has historically kept ALD technology from being a viable commercial process. Featuring an exceptionally-low process volume design and advanced process kit, Applied Materials' ALD TaN chamber enables short cycle times and very low defect densities with a throughput comparable to PVD solutions.

Combined with the ALD TaN chamber, Applied Materials' iCuB/S system features the company's new SIP EnCoRe copper seed process, which offers low cost operation using a flat copper target. The SIP EnCoRe copper chamber employs a self-ionized plasma to achieve the high sidewall coverage, uniformity and particle control required for void-free fill with electrochemical plating.

For flexible, high-productivity wafer handling, the chambers are mounted on the company's innovative Endura XP mainframe. The platform includes two 4-axis, dual-blade robots, capable of separate rotation and extension, which cut wafer transfer time by 50 percent. In addition to precise wafer handling, the Endura XP incorporates significant technical advances in 300mm mainframe design and factory automation such as industry standard cPCI architecture and NT software.

Dataquest, a market research firm, estimated the market for equipment to deposit copper barrier/seed films at $228 million in 2001, growing to $1 billion by 2005. Applied Materials has been the market leader in barrier/seed technology since its Endura Electra Cu Barrier/Seed system was introduced in 1997.

Applied Materials (Nasdaq: AMAT), the largest supplier of products and services to the global semiconductor industry, is one of the world's leading information infrastructure providers. Applied Materials enables Information for Everyone(TM) by helping semiconductor manufacturers produce more powerful, portable and affordable chips. Applied Materials' web site is www.appliedmaterials.com.

Note: A Photo is available at URL: http://www.businesswire.com/cgi-bin/photo.cgi?pw.072202/bb7