Applied Materials Introduces Advanced Patterning Film to Enable Sub-50nm Transistor Gates.

Business Editors/High-Tech Writers

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Unique Dielectric Film Technology Deposited with Producer(R) System

Enhances 248nm and 193nm Lithography Capabilities

to Manufacture Faster Devices

Applied Materials, Inc. introduces its new Advanced Patterning Film(TM) (APF(TM)), an innovative, easily strippable CVD (chemical vapor deposition) hardmask solution that enables chipmakers to fabricate sub-50nm transistor gates and contact structures using standard DUV lithography. The proprietary APF technology, which is deposited with the company's industry-leading Producer system, combines an amorphous carbon film with a thin DARC(TM) (dielectric anti-reflective coating) layer to provide the low reflectivity and high etch selectivity required to achieve superior CD (critical dimension) control in sub-100nm devices.

"Our APF solution allows chipmakers to extend their current 248nm lithography capabilities for patterning polysilicon gates and contacts beyond the 130nm technology node or successfully shift to 193nm imaging," said Dr. Farhad Moghadam, vice president and general manager of Applied Materials' Dielectric Systems and Modules Product Business Group. "This new approach reduces the need for employing elaborate and costly lithography solutions to shrink gate geometries and increase transistor switching speeds by using conventional, low-cost CVD technology."

The integrated sequential processing capability of the high-productivity Producer system provides the performance essential for volume production, unlike batch systems that require multiple systems to deposit a composite film stack. The APF technology was developed in conjunction with Applied Materials' Etch Product Business Group, demonstrating the company's unique advantage in its ability to apply its broad base of technical expertise to ensure optimized process results for customers.

To achieve the high resolution needed for patterning sub-130nm linewidths, chipmakers face the challenge of using thinner photoresist material, while also needing to maintain good etch performance. Using Applied Materials' Ultra Trim(TM) process on the Silicon Etch DPS(TM) II Centura(R) system, it was demonstrated that the APF hardmask open requires as little as 100nm of resist, compared to traditional approaches needing more than 4x the amount. With its high selectivity to polysilicon and oxide, APF provides exceptional control of the etching process to achieve sub-50nm gates. The dual-layer carbon and DARC film stack also provides less than 0.5 percent reflectivity, which is necessary for good CD control.

Applied Materials, the largest supplier of products and services to the global semiconductor industry, is one of the world's leading information infrastructure providers. Applied Materials enables Information for Everyone(TM) by helping semiconductor manufacturers produce more powerful, portable and affordable chips. Applied Materials' web site is www.appliedmaterials.com.

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