Printer Friendly
The Free Library
19,604,538 articles and books
Member login
User name  
Password 
 
Join us Forgot password?

Applied Materials Announces New Ti/TiN CVD System to Enable Low Cost, High Speed DRAMs.


SANTA CLARA Santa Clara, city, Cuba
Santa Clara (sän`tä klä`rä), city (1994 est. pop. 217,000), capital of Villa Clara prov., central Cuba.
, Calif.--(BUSINESS WIRE)--Nov. 23, 1998--

Production-Ready CVD CVD Cardiovascular disease, see there  Ti/TiN Liner/Barrier Technology Using

TiCl4 Chemistry Aimed at High Aspect Ratio Contact

Metallization Met`al`li`za´tion

n. 1. The act or process of metallizing.
 for 256Mb DRAM Generation and Beyond

Applied Materials Applied Materials, Inc. NASDAQ: AMAT (HKSE: 4336 ) is the global leader in nanomanufacturing technology solutions with a broad portfolio of innovative equipment, service and software products for the fabrication of semiconductor chips, flat panel solar displays, solar  Inc., the leading global supplier of Chemical Vapor Deposition Vapor deposition

Production of a film of material often on a heated surface and in a vacuum. Vapor deposition technology is used in a large variety of applications.
 (CVD) systems to the semiconductor industry, introduces the CVD Ti/TiN Centura. Using titanium chloride Titanium chloride may refer to:
  • Titanium(II) chloride
  • Titanium(III) chloride
  • Titanium(IV) chloride
 (TiCl4) source chemistry, the system deposits titanium (Ti) and titanium nitride (TiN) liner/barrier layers in very advanced DRAM contact structures for 256Mb, 0.18-micron generation devices and beyond. The system's TiCl4 TiN process is also ideally-suited for depositing the top electrode of gigabit-level capacitor structures in applications with Ta2O5 (tantalum pentoxide) dielectrics.

"Customers have been very impressed by the production worthiness of this new generation Ti/TiN technology for their latest DRAM designs. The CVD Ti/TiN Centura provides a new capability to effectively fill deep, narrow contact holes, enabling the reduction of contact size and making faster, cheaper memory chips possible," noted Dr. Ashok K. Sinha, president of Applied Materials' Metal Deposition Product Business Group. "This system is a tremendous achievement in advanced metal CVD technology that further strengthens Applied Materials' industry-leading position in metal deposition."

Multiple Ti/TiN Centura systems are already in use by customers; commitments for additional systems have already been received from semiconductor manufacturers in North America, Japan, Korea and Taiwan. Market researcher Dataquest, estimates the 1998 market for Ti/TiN deposition, including CVD and PVD PVD
abbr.
peripheral vascular disease


PVD Peripheral vascular disease, see there
 technologies, to exceed $370 million. The CVD Ti/TiN process is part of the metal CVD market, which is estimated by Dataquest at $717 million in 1998 and forecast to grow to $1.55 billion by 2003.

"Integrating the CVD titanium and titanium nitride process steps on a single platform allows our customers to easily build a complete, high performance liner/barrier structure in a unified process flow with exceptional throughput," noted Russell Ellwanger, chief technical officer of Applied Materials' Metal Deposition Product Business Group. "The enhanced productivity of the systems' TiCl4 TiN chamber will also enable our customers' implementation of next-generation tantalum pentoxide capacitor structures."

The CVD Ti/TiN Centura provides chipmakers with a simplified, sequentially integrated process using Applied Materials' proprietary chamber technologies. In fabricating the contact structure, a robust layer of CVD TiCl4 Ti is first deposited using the company's Ti-xZ Plasma Enhanced CVD chamber. During deposition, the Ti film at the bottom of the contact is completely silicided (forming TiSi2) in-situ -- thus providing a very low resistivity resistivity

Electrical resistance of a conductor of unit cross-sectional area and unit length. The resistivity of a conductor depends on its composition and its temperature.
 film and eliminating the need for a post-deposition anneal To take the brittleness out of metal, plastic or certain carbon composites. Performed in the preparation of new products or in their restoration, annealing is accomplished via a heat treating process.  step. For the barrier layer, a very thin, conformal con·for·mal  
adj.
1. Mathematics Designating or specifying a mapping of a surface or region upon another surface so that all angles between intersecting curves remain unchanged.

2.
 layer of TiCl4 TiN film is then deposited using a thermal process in the company's CVD TiN-xZ chamber. This barrier layer ensures device integrity by preventing the diffusion of the metal fill into other areas of the device. The TiCl4-based Ti/TiN processes have been demonstrated to be effective in contact structures with aspect ratios as high as 15:1.

System throughput of the integrated CVD Ti/TiN Centura is excellent at 35 wafers per hour. Customers opting for a stand-alone CVD Ti or CVD TiN system with a four-chamber configuration can process more than 70 wafers per hour. Marathon runs have validated the performance of the CVD chambers, showing production-proven manufacturability with excellent process stability and particle performance.

Applied Materials, Inc. is a Fortune 500 global growth company and the world's largest supplier of wafer fabrication systems and services to the global semiconductor industry. Applied Materials is traded on the Nasdaq National Market System under the symbol "AMAT AMAT Applied Materials (stock symbol)
AMAT Average Memory Access Time
AMAT Automatic Message Accounting Transmitter
AMAT Anti-Materiel (bomb or mine)
AMAT Ageing Management Assessment Team
." Applied Materials' web site is http://www.AppliedMaterials.com.
COPYRIGHT 1998 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 1998, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

 Reader Opinion

Title:

Comment:



 

Article Details
Printer friendly Cite/link Email Feedback
Publication:Business Wire
Geographic Code:1USA
Date:Nov 23, 1998
Words:596
Previous Article:Snyder's Arnold Communications Selected for National Public Service Ad Campaign.
Next Article:Duet's Corporate Headquarters Relocated to Larger San Jose-based Facility.
Topics:



Related Articles
Applied Materials Releases Integrated CVD/PVD System for Lining Critical Contact and Via Structures; Liner TxZ Centura Combines New CVD TiN Chamber...
Applied Materials Announces Major Breakthrough in HDP-CVD with Second-Generation System; Ultima HDP-CBD Centura Leads the Industry with First...
Applied Materials Launches Cool Al Metallization Technology; Low-Temperature Endura PVD/CVD Process Is Compatible With Low k Films For Less Than or...
Applied Materials Wins Semiconductor International's Best Product Award for Endura Liner/Barrier System.
Applied Materials Announces Order From Texas Instruments for Black Diamond Low k Film System for Advanced Interconnect Development.
Applied Materials' Unique Integrated Liner/Barrier Solution Hits 100th System Shipment.
Applied Materials Launches New Atomic Layer Deposition (ALD) Technology for Nanometer-Generation Chips.
Powerchip Chooses Applied Materials' 300mm CVD Systems for Production of Advanced DRAMs.
Applied Materials Dielectric Systems and Modules Win Supplier Excellence Award from Texas Instruments.
Endura2 platform sets new standard for semiconductor manufacturing systems.

Terms of use | Copyright © 2012 Farlex, Inc. | Feedback | For webmasters | Submit articles