Applied Materials Announces First Barrier/Seed Layer System for Copper Interconnects.

SANTA CLARA, Calif.--(BUSINESS WIRE)--Dec. 2, 1997--

Company's Proven Ion Metal Plasma (IMP) Technology

Provides the Key to Successful Copper Commercialization

Applied Materials, Inc. today launched the industry's first system for depositing the critical barrier and seed layers for copper interconnect circuitry. This new advanced technology will enable chipmakers to build smaller, higher-performing microprocessor and logic devices with significantly increased functionality.

The new product, called the Endura(R) Electra Cu(TM) system, features Applied Materials' new Electra IMP(TM) technology on its powerful Endura HP/VHP platform. Electra IMP is based on the company's proven Ion Metal Plasma technology that extends physical vapor deposition processing to sub-0.25 micron device generations.

Electra IMP technology is used to perform an integrated process sequence that deposits a tantalum (Ta) or tantalum nitride (TaN) barrier layer, followed by a thin "seed" layer of copper. The excellent step coverage and conformal nature of Electra IMP thin films provide the critical base needed for the successful subsequent bulk filling of copper by a physical vapor deposition (PVD), chemical vapor deposition (CVD) or electrochemical process.

"The barrier and seed layers enable the volume production of copper-based semiconductors," said Dr. Ashok K. Sinha, president of Applied Materials' Metal Deposition Product Business Group. "Electra IMP introduces Applied Materials' Total Solutions(TM) strategy for copper technology, which we expect will pave the way to the interconnects of the 21st Century. It allows us to provide our customers with an enabling technology at a low operating cost equivalent to today's other mainstream PVD processes.

"Since 1996, Applied Materials has revolutionized physical vapor deposition capability by successfully commercializing Ion Metal Plasma technology. This proprietary technology is currently being used by the semiconductor industry's leading-edge manufacturers and is well accepted as the state-of-the-art for advanced titanium and titanium nitride aluminum-based PVD processes. Its extension to tantalum/tantalum nitride and copper should be even more advantageous to our customers since it can be quickly and easily integrated into existing process flows," Sinha noted.

Applied Materials already has been working with several customers worldwide on copper interconnects using Electra IMP technology and expects copper-based devices to begin emerging in late 1998. Dataquest projects the market for copper deposition equipment to reach $240 million by the year 2002.

Building the Copper Interconnect: IMP Ta/TaN Barrier Layer

Using Electra IMP technology, Applied Materials' Endura Electra Cu system first deposits either tantalum or tantalum nitride film. The chamber hardware is common to both films, so the choice is based on individual customer preference. Both IMP Ta and TaN technologies deposit a very thin layer (less than 500 angstrom) of low resistivity, low stress film that conformally coats the entire interconnect via or trench structure. Tantalum-based films provide outstanding barrier properties that effectively guard against copper's tendency to diffuse into silicon or silicon dioxide. IMP technology also allows the Ta-based film to be deposited across the entire substrate, providing protection from copper diffusion to the wafer's edge.

IMP Cu Seed Layer

After depositing the Ta-based barrier film, the wafer is transported to the IMP Cu chamber for the seed layer. The integration of these processes under ultrahigh vacuum conditions is a distinct advantage since tantalum film oxidation is avoided, ensuring low electrical resistivity and good adhesion of both film layers.

The IMP Cu seed layer provides an atomically smooth and cohesive copper interface that allows the correct grain growth during the subsequent bulk fill step. Because copper is sensitive to high temperature, the IMP Cu film is deposited at a temperature below 150 degrees Celsius, enabling a smooth interface with a semi-epitaxial grain structure. Like the IMP Ta or TaN process, the copper layer is extremely conformal and exhibits low resistivity.

Dr. Fusen Chen, senior general manager of Applied Materials' PVD division said, "In terms of enabling technology, extendibility and operating cost, Applied Materials' Endura Electra Cu system provides the semiconductor industry with the first production-capable barrier/seed layer technology for copper interconnects."

"This system is critical to successful copper electroplating and should help our customers commercialize copper with a minimum of risk and in a short timeframe," added Sergio Edelstein, general manager of PVD at Applied Materials. "Both IMP tantalum and copper films are compatible with chemical mechanical polishing as well. We are also developing our 300 mm version of Electra IMP technology for the 0.18 micron and 0.13 micron device generations."

Production-Proven Ion Metal Plasma Technology and Endura Platform

IMP is a unique deposition technology in which atoms sputtered from a target are ionized in plasma before reaching the wafer. The ions are attracted toward the wafer by an electrical charge and deposit thinly, yet uniformly, across the entire surface of high aspect ratio structures. The plasma density associated with IMP is moderate and, therefore, presents a minimal risk of damaging gate oxides. Film coverage can be precisely tuned using pressure, RF power and bias parameters without compromising other film properties such as stress and uniformity.

The Endura Electra Cu system uses Applied Materials' industry-leading Endura platform to achieve production readiness with high throughput; more than 1,000 Endura systems are currently in use worldwide. Acceptance of IMP technology has been exceptional; more than 90 chambers for the deposition of titanium (Ti) and titanium nitride (TiN) already have been shipped to customers worldwide.

A typical Endura Electra Cu system is configured with a Preclean chamber, an IMP Ta or TaN chamber and two IMP Cu chambers. Operating cost of the integrated system is equivalent or lower than most advanced PVD processes. Advance commitments for the system have been received from multiple customers worldwide and production shipments are expected to begin in the second calendar quarter of 1998.

Applied Materials, Inc. is a Fortune 500 global growth company and the world's largest supplier of wafer fabrication systems and services to the global semiconductor industry. Applied Materials is traded on the Nasdaq National Market System under the symbol "AMAT." Applied Materials' web site is http://www.AppliedMaterials.com .

CONTACT: Applied Materials, Inc.

Betty Newboe, 408/563-0647 (editorial/media)

Carolyn Schwartz, 408/748-5227 (financial community)