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Applied Materials Announces Breakthrough in Interface Engineering Technology for 65-45nm Transistors.


SANTA CLARA, Calif. -- Applied Materials, Inc. today announced a key advancement in nano-scale interface engineering with its new Applied Siconi(TM) Preclean process for fabricating leading-edge transistor contacts. The Siconi Preclean replaces conventional plasma-based sputter etch technology with a dry, chemical process that gently but effectively removes oxidized oxidized

having been modified by the process of oxidation.


oxidized cellulose
see absorbable cellulose.
 silicon under high vacuum. This one-step process prepares the wafer's surface prior to the formation of the critical nickel (Ni) silicide sil·i·cide  
n.
A compound of silicon with another element or radical.

Noun 1. silicide - any of various compounds of silicon with a more electropositive element or radical
 layer to create an interface with minimal damage. The Siconi Preclean also dramatically reduces interface defects while eliminating wet clean queue time restrictions.

"The smallest transistor structures are now only a few atoms or molecules in size, making atomic-level thin film interface engineering extremely critical to the chip's function," said Dr. Farhad Moghadam, senior vice president and general manager of Applied Materials' Thin Films Group. "Combined with our Applied Endura ALPS Alps, great mountain system of S central Europe, c.500 mi (800 km) long and c.100 mi (160 km) wide, curving in a great arc from the Riviera coast on the Mediterranean Sea, along the borders of N Italy and adjacent regions of SE France, Switzerland, SW Germany, and (R) Ni PVD PVD
abbr.
peripheral vascular disease


PVD Peripheral vascular disease, see there
(1) system, this new Siconi Preclean process enables advanced logic customers to more easily transition to nickel silicide technology to achieve higher switching speeds with lower current leakage -- thus helping to reduce power usage in their advanced chip designs. We are working to extend the breakthrough advantages of our Siconi Preclean technology to other process applications."

The Applied Siconi Preclean process, which is completed in a single chamber for optimal throughput and system utilization, is highly selective to oxide, enabling oxide removal with minimal impact to other materials or small features on the device. The Siconi Preclean technology can also be used after silicidation to remove the oxidized silicide, forming a low resistance interface with the contact structure. For more information on the Applied Siconi Preclean, please visit: http://www.appliedmaterials.com/products/alps_ni_pvd.html?menuID=1_12_ 5 (Due to its length, this URL URL
 in full Uniform Resource Locator

Address of a resource on the Internet. The resource can be any type of file stored on a server, such as a Web page, a text file, a graphics file, or an application program.
 may need to be copied/pasted into your Internet browser's address field. Remove the extra space if one exists.).

Multiple Applied Materials systems with the Siconi Preclean chamber have been shipped to 5 of the top 10 chipmakers in the US, Japan and Asia; customers have also placed orders to add this innovative Siconi Preclean technology to their installed base of systems.

Applied Materials, Inc. (Nasdaq:AMAT AMAT Applied Materials (stock symbol)
AMAT Average Memory Access Time
AMAT Automatic Message Accounting Transmitter
AMAT Anti-Materiel (bomb or mine)
AMAT Ageing Management Assessment Team
), headquartered in Santa Clara, California Santa Clara, California (IPA: /ˌsæntəˈklærə/) , founded in 1777 and incorporated in 1852, is a city in Santa Clara County, in the U.S. state of California. , is the largest supplier of equipment and services to the global semiconductor industry. Applied Materials' web site is www.appliedmaterials.com.

(1) PVD: physical vapor deposition This article or section is in need of attention from an expert on the subject.
Please help recruit one or [ improve this article] yourself. See the talk page for details.
 
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Publication:Business Wire
Geographic Code:1USA
Date:Sep 20, 2005
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