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Applied Materials' New Eterna System Extends SACVD Technology to Sub-100nm Manufacturing.


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SANTA CLARA, Calif.--(BUSINESS WIRE)--July 19, 2002

300mm SACVD SACVD Sub-Atmospheric Pressure Chemical Vapor Deposition  System Uses Latest Producer SE Platform

for Increased Productivity

Applied Materials, Inc. announces its new 300mm SACVD(1) Eterna(TM) system on the company's high-productivity Producer(R) SE platform for depositing BPSG BPSG Boron-Doped Phosphosilicate Glass (2)-doped dielectric films. The Eterna system extends Applied Materials' proven SACVD technology to provide the gap fill performance and productivity necessary for sub-100nm device applications.

"The Eterna system extends our market-leading TEOS/Ozone SACVD technology to handle the stringent inter-layer dielectric (ILD (Inter Layer Dielectric) The insulation used between layers of aluminum or copper wire that interconnect the transistors in a chip. There are three to four layers in a memory chip and five to seven in a logic chip with hundreds of meters of wiring. ) requirements of future chip generations," said Steve Ghanayem, general manager of the Pre-Metal Dielectric Division of Applied Materials. "Combining our latest advances in SACVD technology with the productivity-enabling capabilities of the Producer SE platform, the Eterna system provides a superior sub-100nm solution to the critical gap-fill challenges facing our customers as they implement their next generation high-speed transistor designs. We already have multiple commitments from customers for the Eterna system, with shipments expected to begin later this year."

The Eterna process chambers are designed to provide even greater gap-fill capability for low thermal budget (less than 750 degrees C anneal To take the brittleness out of metal, plastic or certain carbon composites. Performed in the preparation of new products or in their restoration, annealing is accomplished via a heat treating process. ) ILD applications. The system's new ultra-high ozone process increases film conformality and density, while maintaining excellent uniformity and productivity. A new ceramic heater design with improved temperature uniformity enables superior within-wafer and wafer-to-wafer dopant dopant

Any impurity added to a semiconductor to modify its electrical conductivity. The most common semiconductors, silicon and germanium, form crystalline lattices in which each atom shares electrons with four neighbours (see bonding).
 range and repeatability, leading to higher device yields. In addition, the Eterna's redesigned Precision Liquid Injection System (PLIS PLIS Pipeline Integrity System (Oil & Gas) ), called Individual Vapor Line PLIS, significantly enhances the reliability of liquid delivery and reduces maintenance time.

Based on Applied Materials' highly successful single-wafer Producer CVD CVD Cardiovascular disease, see there  design, the Producer SE platform enables customers to seamlessly transition to 300mm production. A new loadlock pre-heating design allows the large 300mm wafers to stabilize their thermal expansion before transfer to the process chambers, saving time over methods that heat the wafer while in the process chamber. All Producer systems have a unique platform architecture that features a central transfer chamber mounted with up to three Twin Chamber(TM) CVD modules.

Applied Materials (Nasdaq: AMAT AMAT Applied Materials (stock symbol)
AMAT Average Memory Access Time
AMAT Automatic Message Accounting Transmitter
AMAT Anti-Materiel (bomb or mine)
AMAT Ageing Management Assessment Team
), the largest supplier of products and services to the global semiconductor industry, is one of the world's leading information infrastructure providers. Applied Materials enables Information for Everyone(TM) by helping semiconductor manufacturers produce more powerful, portable and affordable chips. Applied Materials' web site is www.appliedmaterials.com.

(1) SACVD: Sub-Atmospheric Chemical Vapor Deposition

(2) BPSG: borophosphosilicate glass

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Publication:Business Wire
Geographic Code:1USA
Date:Jul 19, 2002
Words:420
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