Analog Devices Using Epi Systems From Applied Materials to Build Fast Silicon and SiGe Bipolar Chips.Business Editors/High-Tech Writers SANTA CLARA Santa Clara, city, Cuba Santa Clara (sän`tä klä`rä), city (1994 est. pop. 217,000), capital of Villa Clara prov., central Cuba. , Calif.--(BUSINESS WIRE)--Nov. 15, 2001 Epi Centura(R) Systems Enable Si and SiGe Bipolar Technologies to Move From R&D to Production Applied Materials Applied Materials, Inc. NASDAQ: AMAT (HKSE: 4336 ) is the global leader in nanomanufacturing technology solutions with a broad portfolio of innovative equipment, service and software products for the fabrication of semiconductor chips, flat panel solar displays, solar , Inc. (Nasdaq:AMAT AMAT Applied Materials (stock symbol) AMAT Average Memory Access Time AMAT Automatic Message Accounting Transmitter AMAT Anti-Materiel (bomb or mine) AMAT Ageing Management Assessment Team ), the leading provider of epitaxial (epi) deposition technology to the semiconductor industry, has installed its Epi Centura systems at Analog Devices' fabs in Massachusetts and California, where they are being used for next-generation bipolar device production using silicon (Si) and silicon germanium (SiGe) A semiconductor material made from silicon and germanium. Germanium is very similar to silicon, but when one layer is grown on top of the other to form the base of the transistor, the resulting transistor can switch faster and yield higher performance. (SiGe) technologies. Silicon germanium is a key material that enables the fabrication fabrication (fab´rikā´sh  n),n the construction or making of a restoration. of high frequency, low power chips. One of the most common applications for SiGe is in the formation of heterojunction bipolar transistors, where a small amount of germanium germanium (jərmā`nēəm) [from Germany], semimetallic chemical element; symbol Ge; at. no. 32; at. wt. 72.59; m.p. 937.4°C;; b.p. 2,830°C;; sp. gr. 5.323 at 25°C;; valence +2 or +4. is added to the base of a silicon bipolar device to overcome fundamental gain, speed, and resistance trade-offs in silicon transistors. Brad Scharf, division fellow and manager of Process Development at Analog Devices' fab in Wilmington, Massachusetts, said, "Our early involvement with SiGe heterojunction transistors with epitaxial bases demonstrated the value of that technology for high-speed mixed-signal applications. After a thorough investigation of different CVD CVD Cardiovascular disease, see there and UHV-CVD UHV-CVD Ultra-High Vacuum Chemical Vapor Deposition SiGe technologies, we chose the Epi Centura for its excellence in productivity, throughput, profile control, and process uniformity. The flexibility of the multi-chamber system and the applications expertise demonstrated by Applied Materials were also positive factors. This system meets all of our requirements for both Si and SiGe production today, and for several future device generations." "This multi-system installation at a bipolar process leader like Analog Devices shows our market momentum for both new and sustaining epi technologies," stated Per-Ove Hansson, general manager of the Epi Substrate Division at Applied Materials. "We have added many new features to the Epi Centura for advanced epi processing, including automated setup of complex germanium profiles, integrated preclean, and integrated metrology that will help our customers meet both current and future epi processing needs." Applied Materials (Nasdaq:AMAT), the largest supplier of products and services to the global semiconductor industry, is one of the world's leading information infrastructure providers. Applied Materials enables Information for Everyone(TM) by helping semiconductor manufacturers produce more powerful, portable and affordable chips. Applied Materials' Web site is http://www.appliedmaterials.com. |
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