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Amorphous and polycrystalline thin-film silicon science and technology; proceedings.


9781558999497

Amorphous and polycrystalline Adj. 1. polycrystalline - composed of aggregates of crystals; "polycrystalline metals"
crystalline - consisting of or containing or of the nature of crystals; "granite is crystalline"
 thin-film silicon science and technology; proceedings.

International Symposium on [Title] (2007: San Francisco, CA) Ed. by Virginia Chu et al.

Materials Research Society

2007

594 pages

$114.00

Hardcover

MRS MRS - Modifiable Representation System.

An integration of logic programming into Lisp.

["A Modifiable Representation System", M. Genesereth et al, HPP 80-22, CS Dept Stanford U 1980].
 symposium proceedings; v.989

TK7871

This work collects 85 of the presentations, including posters, given at the April 2007 Materials Research Society symposium of the same name, convened in recognition of the success of amorphous silicon and polysilicon materials in commercial products. The papers are presented in sections covering defects and metastability met·a·sta·ble  
adj.
Of, relating to, or being an unstable and transient but relatively long-lived state of a chemical or physical system, as of a supersaturated solution or an excited atom.
, solar cells, alloys, electronics on flexible substrates, novel applications, thin film transistors, images and sensors, crystallization techniques, and thin film growth. The poster sessions covered the same general topics (with the exception of defects and metastability) as well as nanocrystals, nanoclusters, and nanowires; structural properties; and micro- and nanocrystalline silicon. A few examples of specific topics covered include enhancement of light-trapping and efficiency of solar cells with photonic crystals, effect of boron doping on microcrystalline microcrystalline /mi·cro·crys·tal·line/ (-kris´tah-lin) made up of minute crystals.

microcrystalline

made up of minute crystals.
 germanium germanium (jərmā`nēəm) [from Germany], semimetallic chemical element; symbol Ge; at. no. 32; at. wt. 72.59; m.p. 937.4°C;; b.p. 2,830°C;; sp. gr. 5.323 at 25°C;; valence +2 or +4.  carbon thin films, hot-wire chemical vapor deposition epitaxy on polycrystalline silicon seeds on glass, stability of amorphous silicon thin-film transistors under prolonged high compressive com·pres·sive  
adj.
Serving to or able to compress.



com·pressive·ly adv.
 strain, and noise performance of high fill factor pixel architecture for robust large-area image sensors using amorphous silicon technology.

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Date:Mar 1, 2008
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