Allayer to Integrate MoSys' 1T-SRAM Memory Technology in Advanced Communications ICs; Ultra-dense Embedded 1T-SRAM Used to Meet Needs of Communications Applications.

Business/Technology Editors

SUNNYVALE, Calif. and SAN JOSE, Calif.--(BUSINESS WIRE)--Jan. 31, 2000

Today MoSys, Inc. and Allayer Communications announced the licensing of MoSys' advanced 1T-SRAM embedded memory technology for integration in Allayer's advanced data communications products incorporating high performance, high density embedded memories.

Allayer provides leading edge products for the Ethernet switching market. Its data communications switches deliver the performance needed to meet the exponential growth in bandwidth requirements fueled in large part by the explosive growth in Internet traffic. OEMs who use Allayer's latest family of products, for example, can create network switches without the need for an external router.

&uot;Allayer evaluated and selected MoSys' 1T-SRAM embedded memory technology for its unique combination of performance, density and power capabilities,&uot; said David Wong, Allayer's director of marketing. &uot;These 1T-SRAM characteristics are ideally suited to our communication applications and are not available from other technologies.&uot;

Allayer's data communication switches have expanded beyond address resolution and now include layer 3 routing functions as well. Such switches require multi-megabit blocks of high performance, low latency memory to handle very high data throughput. By integrating these memories on chip, Allayer's data communication switches gain increased performance at lower cost. &uot;MoSys is excited to enable Allayer's continued industry innovation&uot;, stated Mark-Eric Jones, vice president and general manager of intellectual property at MoSys, Inc. &uot;With its very fast cycle times and ultra-dense architecture, MoSys' 1T-SRAM technology provides Allayer with the memory performance it needs at the density required for economic integration.&uot;

About 1T-SRAM

Available in densities up to 128Mbits, MoSys' patented 1T-SRAM technology uses a single transistor cell to achieve its exceptional density while maintaining the refresh-free interface and low latency random memory access cycle time associated with traditional six-transistor SRAM cells. Embedded 1T-SRAM allows designers to get beyond the density limits of six-transistor SRAMs; it also reduces much of the circuit complexity and extra cost associated with using embedded DRAM. 1T-SRAM memories can be fabricated in either pure logic or embedded memory processes using as little as one ninth of the area of traditional six-transistor SRAM cores. In addition to the exceptional performance and density, this technology offers dramatic power consumption savings by using under a quarter of the power of traditional SRAM memories. 1T-SRAM technology is volume production proven in millions of MoSys' discrete memory devices.

About Allayer Communications

Allayer Communications was founded in 1997 to design, develop, manufacture and market high-performance silicon solutions for the global network. The company utilizes a combination of leading edge architecture, mixed-signal design expertise and multiple silicon process technologies to offer IC products for the Gigabit Ethernet and Fast Ethernet communications market. The corporate name -- pronounced &uot;All-layer&uot; -- represents the company's long-range intention to provide silicon solutions for all levels of the OSI networking model.

Allayer is backed by over $12.5 million in venture funding from Greylock, Acer Capital America, VenGlobal Capital. Allayer's corporate headquarters is located in San Jose. Sales and consulting engineering offices are located throughout the world. For further information about Allayer and its products, please contact: Marketing Communication Department, Allayer Communications, 107 Bonaventure Drive, San Jose, CA 95134, phone: [phone], or visit the corporate Web site at: http://www.allayer.com. RoX and RoX-II are trademarks of Allayer Communications.

About MoSys

MoSys, Inc. is the leading semiconductor technology company specializing in innovative, high performance, random access memories based on its patented 1T-SRAM architecture. Founded in 1991, the company develops innovative memory technology for licensing to semiconductor and systems companies. MoSys also uses this technology to produce its own memory products. The company's unique memory architecture has been proven in the volume production of over 30 million memory devices. Licensees that are adopting 1T-SRAM technology include tier one electronics, semiconductor and foundry companies. The company is headquartered at 1020 Stewart Drive, Sunnyvale, California, 94086. More information on MoSys is available at http://www.mosys.com.

Note for Editors:

1T-SRAM is a trademark of MoSys, Inc. All other trademarks or registered trademarks are the property of their respective owners.