Advanced Power Technology RF Announces TWO Higher Power S-Band Transistors at MTT-S Symposium.

Business Editors/High-Tech Writers

MTT-S Symposium

SANTA CLARA, Calif.--(BUSINESS WIRE)--June 7, 2004

Expansion of S-Band Line Verifies Commitment to the Future

of Radar Markets

Advanced Power Technology RF (APT-RF) (Nasdaq:APTI), a leading supplier of silicon power transistors for radio frequency (RF) and microwave applications, is announcing the next in its series of High power S-Band transistors. These new products utilize newer chip designs and processing enhancements to offer performance improvements, notably in power gain and gain flatness over the frequency range. Products and data will be shown during the MTT-S Symposium in Fort Worth.

APT-RF is developing a full family of S-Band transistors and has generated a library of transistor die to cover the applications from 2.7 to 3.4 GHz at the key pulse widths and power levels. All of the transistors use Gold Topside metallization and Gold Wires. In support of the development of the final transistors we have established the capability to perform Pulsed Load Pull Analysis on the transistor structure to obtain the data, which is used to establish the optimum internal matching networks. This information is then used with EM Simulation to generate the final test fixtures. The resulting transistors offer improved performance over the operating band -- resulting in flatter power gain and higher overall power gain and efficiency.

The 2729-170 is rated with an input power of 25.7 Watts to provide a minimum power output of 170 Watts over the band 2.7 to 2.9 GHz. The 2931-150 is rated with an input power of 21.7 Watts to provide a minimum power output of 150 Watts over the band 2.9 to 3.1 GHz. The higher output power allows the designer to reduce the number of high power transistors needed in order to produce amplifiers with multi kilowatt output.

"Customers turn to APT-RF for our application-specific designs and ability to deliver transistors that meet the design criteria of their circuits," said Mike Mallinger, director of Product Marketing for Radar Applications. "Our next generation S-Band transistors give us a foundation to create a family of devices for a full range of S-Band radar applications, not only for 2.7 to 2.9 and 2.9 to 3.1 GHz but up through 3.5 GHz over the next year. These new designs, coupled with our automated assembly and test will provide customers with an assured source of supply providing the most consistent and reproducible product on the market for S-Band Radar."

Price and Availability

Small volume pricing (1-24 pieces) for 2729-170 is $450.56 and the 2931-150 is $394.24. Product availability is 6-12 wks, or sooner pending stock. Transistor data sheets and test circuit layout can be downloaded from the Web site or obtained from the factory.

With operations in Bend, Oregon, Montgomeryville, Pennsylvania, Santa Clara, California and Bordeaux France, APT is a leading supplier of power semiconductors for RF, Microwave, Linear and Switchmode applications. For additional information on Advanced Power Technology visit its Web site at www.advancedpower.com.