Printer Friendly
The Free Library
19,573,952 articles and books
Member login
User name  
Password 
 
Join us Forgot password?

Advanced Power Technology RF (APT-RF) Introduces P-Band Higher Power, High Gain, Medium Pulse Transistors; Expansion of P-Band Line Verifies Commitment To The Future of Radar Markets.


SANTA CLARA Santa Clara, city, Cuba
Santa Clara (sän`tä klä`rä), city (1994 est. pop. 217,000), capital of Villa Clara prov., central Cuba.
, Calif. -- Advanced Power Technology RF's Military & Aerospace Division (APT-RF) (Nasdaq:APTI APTI Association for Preservation Technology International
APTI Air Pollution Training Institute
), a leading supplier of silicon power transistors for radio frequency (RF) and microwave applications, is pleased to announce a new product family of high power transistors targeting for the P-Band Pulsed Radar Applications. These new products utilize newer chip designs and processing enhancements to offer state-of-the-art performance, notably in high power and high gain over the frequency range and the lowest droop over 150us pulse width pulse width Pulse duration Cardiac pacing The duration of a pacing pulse in msecs .

The P-Band series transistors consists of three model types: 0910-60M, 0910-150M, and 0910- 300M, which cover the frequency for P-Band Radar Applications from 890 to 1000 MHz (MegaHertZ) One million cycles per second. It is used to measure the transmission speed of electronic devices, including channels, buses and the computer's internal clock. A one-megahertz clock (1 MHz) means some number of bits (16, 32, 64, etc.  with a pulsed output power of 60W, 150W, and 300W, respectively. These transistors are designed to handle medium pulse widths of 150us with a duty cycle of 5% minimum. The high performance class C 300W device, for example, offers unparalleled performance of 9.6 dB of power gain, 50% collector efficiency and extremely low droop, 0.5 dB or less, across the 150 us pulse width. This state-of-the-art performance is achieved with the latest APT RF's Si BJT See bipolar.  high power technology.

0910-300M Key Features:

--Designed for P-Band Radar Application: 890 - 1000 Mhz

--Able to Handle Medium Pulse Format:150 us, 5%

--Excellent Output Power:300W

--Outstanding Power Gain:9.6 dB

--Superb Droop Performance:0.5 dB

--Rise Time:150 ns

--Collector Efficiency:50%

--Compression:In Compression

--Load Mismatch:VSWR VSWR Voltage Standing Wave Ratio
VSWR Vertical Standing Wave Ratio
 3:1

--Package:Hermetic hermetic /her·met·ic/ (her-met´ik) impervious to air.

her·met·ic or her·met·i·cal
adj.
Completely sealed, especially against the escape or entry of air.
 Metal Package

By integrating 4, 6, or 8 of the 0910-300M transistors with a 0910-150M and 0910-60 as the driver and pre-driver stage; customers can comfortably achieve kilowatts output power for P-Band Radar application.

"We are extremely pleased to offer these top-notched P-band products, in addition to the existing APT RF L-Band Radar Product Family. These latest P-Band products extend the frequency coverage available to our valued Radar customers," said Jerry Chang, Director of Radar and RF Module Business. "Radar customers turn to APT-RF for our strong custom design and development capability, excellent technical and product support, and ability to deliver high volume transistors that provides the best repeatability and consistency in the industry."

With Operations in Bend, Oregon, Santa Clara, California Santa Clara, California (IPA: /ˌsæntəˈklærə/) , founded in 1777 and incorporated in 1852, is a city in Santa Clara County, in the U.S. state of California. , Montgomeryville, Pennsylvania, Boulder, Colorado and Bordeaux France, APT is a leading supplier of power semiconductors for RF, Microwave, Linear, and Switch Mode Applications. Visit our website at www.advancedpower.com.
COPYRIGHT 2005 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2005, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

 Reader Opinion

Title:

Comment:



 

Article Details
Printer friendly Cite/link Email Feedback
Publication:Business Wire
Date:Nov 28, 2005
Words:392
Previous Article:USI Holdings Corporation's Chairman, President & CEO David L. Eslick to Speak at Friedman, Billings, Ramsey & Co., Inc., 2005 Investor Conference.
Next Article:Learning Care Group Boosts Gross Profits, Continues Revenue Growth in Second Quarter of Fiscal 2006.
Topics:



Related Articles
Linear General Purpose Amplifier Ideally Suited For Low-Power Applications.
RF 2310 FEATURES HIGH LINEARITY AND LOW COST FOR VOICE AND DATA COMMUNICATION.
Military wireless systems require sturdier defenses. (Industry Viewpoint).
Freescale Broadens RF Power Transistor Options for WiMAX Base Stations; Wireless Infrastructure Industry's First LDMOS Transistors Designed to Meet...
Sirific Wireless Introduces Industry's First Single-Chip CMOS HSDPA / WEDGE RF Transceiver for 3.5G Mobile Handsets.
Advanced Power Technology RF (APT-RF) Introduces High L-Band, Higher Power, High Gain, Medium Pulse Transistors; Expansion of L-Band Line Verifies...
Advanced Power Technology Announces Super-Rugged VHF Power RF MOSFET Operating up to 165 Volts DC.
RFMD(R) Edge Power Amplifier Supports World's Thinnest Slider Phone.
Renesas Introduces SiGe Power Transistor with Industry's Highest Performance for 2.4/5GHz Wireless LAN Routers, RF Tag Readers/Writers.
Freescale LDMOS RF Power Transistors Optimize Performance of Wireless Base Stations Using Doherty Amplifiers.

Terms of use | Copyright © 2012 Farlex, Inc. | Feedback | For webmasters | Submit articles