Advanced Power Technology Announces Super-Rugged VHF Power RF MOSFET Operating up to 165 Volts DC.

BEND, Ore. -- Advanced Power Technology RF (NASDAQ:APTI), a leading supplier of silicon power transistors for radio frequency (RF) and microwave applications, announces the addition of the ARF475FL to its family of High Voltage, Flangeless packaged, RF Power MOSFETs.

KEY FEATURES

--Up to 1000 Watts Pulsed Output Power

--Lower cost flangeless package

--Up to 150 MHz Operation

--165 V Operation / 500 V BV(DSS)

--Class AB Capable

--Maximized Safe Operating Area (SOA)

--High Load Mismatch Tolerance

--Superior Thermal Stability

The ARF475FL utilizes a newly-patented process and finer geometry that delivers much higher peak power and RF gain than previous high voltage parts. They operate reliably at DC voltages up to 165 volts. The ARF475FL uses two die, configured for push-pull operation, in the new T3 Flangeless package and is capable of 1000W pulsed output and 300W CW at up to 150 MHz.

High-power, high-voltage RF generators are used extensively for plasma generation, CO(2) laser exciters, medical MRI equipment and a wide variety of HF/VHF communications equipment such as broadband linear amplifiers. To specifically address the needs of these very demanding markets, APT has developed a proprietary ultrahigh voltage wafer fabrication process for making RF power MOSFETs. This doubles the transistor's available SOA (Safe Operating Area), dramatically improves its resistance to load mismatch, provides superior thermal stability, and significantly enhances the ability to reliably operate in Class AB. The 165 volt DC maximum operating voltage simplifies output impedance matching circuitry and facilitates integrated assemblies combining DC power supply and RF power amplifier to significantly reduce the size and overall system cost.

The ARF475FL is available in the new flangeless T3 package. This package lowers thermal resistance and cost compared to ceramic packages with a copper tungsten flange. To obtain the high power dissipation, the backside of the package is lapped to provide an optimum thermal interface surface to mate with the system heat sink. Power cycle results in typical applications have been demonstrated beyond 1 million cycles with a power density of 700 Watts/sq. inch. The coplanar lead arrangement facilitates circuit layout and provides over 2500 volts isolation between any terminal and the mounting surface.

Applications for these devices include MRI, CO(2) Laser RF sources and RF Plasma generators up to 150 MHz; as well as broadband linear amplifiers for 1.5 to 60 MHz. Samples and prototype production quantities are available starting 4 weeks ARO. At quantities of 500 pieces, the unit price for the ARF475FL is $81.25. They are available through the factory and authorized APT-RF distributors.

APT-RF is a leading supplier of RF and microwave silicon power transistors and is located in Santa Clara, California. Other operations include Advanced Power Technology, Bend, Oregon, a leading supplier of high voltage, high power MOSFETs, IGBTs, Ultra-Fast Recovery and Schottky Diodes and Advanced Power Technology Europe, Bordeaux, France, a leader in standard and Applications Specific Power Modules (ASPMs(R)).

To assist the designer, SPICE models and a data sheet describing the features and benefits of the ARF475FL may be downloaded from APT's website at www.advancedpower.com or obtained from the factory.

For additional information contact:
405 SW Columbia Street,
Bend, Oregon 97702
Phone: [phone] or [phone] outside of North America;
Fax: [phone]
E-mail: [e-mail].