Advanced Power Technology Announces Super-Rugged RF Power MOSFETs Operate Up to 65 Volts DC.

Business Editors, High-Tech Writers

BEND, Ore.--(BUSINESS WIRE)--Aug. 16, 2001

Advanced Power Technology Inc. (Nasdaq:APTI) a world leader in high voltage, high power semiconductor products, announces the addition of the ARF462 and ARF464 to its family of Super-Rugged High Voltage RF Power MOSFETs.

Both the ARF462 and ARF464 operate reliably at DC voltages up to 65 volts. The ARF462 delivers 150 watts of CW output power up to 60 MHz and the ARF464 delivers 100 watts of CW output power up to 100 MHz.

KEY FEATURES

-- 150 Watts CW Output Power

-- Up to 100 MHz

-- 65 V Operation / 200 V BVDSS

-- Class AB Capable

-- Increased Safe Operating Area (SOA)

-- High Load Mismatch Tolerance

-- Superior Thermal Stability

-- Low Cost

High power RF generators are used extensively in semiconductor manufacturing, CO2 laser, and medical MRI equipment and a wide variety of HF/VHF communications equipment such as broadband linear amplifiers. To specifically address the needs of these very demanding markets, APT has developed a proprietary high voltage wafer fabrication process for making RF power MOSFETs. This doubles the transistor's available SOA (Safe Operating Area), dramatically improves its resistance to load mismatch, provides superior thermal stability, and significantly enhances the ability to reliably operate in a Class AB linear mode. Conventional RF MOSFETs for 50 volt operation have maximum device breakdown voltages (BVDSS) of about 125 volts providing marginal headroom for reliability in many applications. These new high BVDSS RF MOSFETs allow increased headroom up to 65 volt operation.

The ARF462 and ARF464 are available in a common source TO-247 low cost plastic package in mirror-image A and B configurations that simplify circuit layout of both parallel and push-pull operation. The rated power dissipation for the ARF462 is 250 watts and the ARF464 is 180 watts.

Applications for these devices include RF Plasma generators at 13, 27 and 40 MHz; MRI and CO2 Laser RF sources up to 81 MHz, as well as broadband linear amplifiers 1.5 to 30 MHz. Samples are available from stock, full production quantities available in 4Q01. APT's plastic packaged RF power devices are substantially lower in price than conventional ceramic packaged devices. At quantities of 1,000 pieces, the unit price for ARF462 is $24 and the unit price for the ARF464 is $18. They are available through the factory and all authorized APT distributors.

APT is a volume supplier of RF power devices. With operations in Bend, Oregon and Bordeaux, France, APT is a leading supplier of high voltage, high power, high efficiency MOSFETs, RF MOSFETs, IGBTs, Ultra-Fast Recovery and Schottky Diodes, and Application Specific Power Modules (ASPM) for RF, Switchmode and Linear operation.

Preliminary data sheets are available to assist the designer, describing the features and benefits of the new MOSFETs. Data sheets and SPICE models may be downloaded from APT's website at http:www.advancedpower.com or obtained from the factory.

For additional information, contact APT at 405 SW Columbia Street, Bend, Oregon 97702 Phone: [phone] or 541/382-8028 outside of North America; Fax: [phone] E-mail: [e-mail].