Advanced Power Technology Announces New High Power Hermetic MOSFETs which Provide Extremely Low Switching and Conduction Losses for Use in Harsh Environments.

Business Editors/High-Tech Writers

BEND, Ore.--(BUSINESS WIRE)--Aug. 13, 2003

Advanced Power Technology (Nasdaq:APTI) is pleased to announce its new generation of high voltage MOSFETs designated POWER MOS 7(R) are now available in hermetic, discrete packages. POWER MOS 7(R) has up to 60% lower total gate charge (Qg) than the current POWER MOS V(R) generation devices. In addition, POWER MOS 7(R) has up to a 30% reduction in On-Resistance (RDS (on)) resulting in up to a 20% increase in maximum current carrying capacity (ID). Overall these new devices offer an extremely low combined power loss Figure of Merit, RDS(on) X Qg, enabling smaller, more efficient, and more reliable power conversion.

Utilizing APT's patented metal on polysilicon gate structure, the internal chip gate resistance is one or two orders of magnitude lower than comparable industry standard polysilicon gate devices. This, combined with lower capacitances, Qg, and RDS(on) makes these MOS 7(R) devices extremely fast switching as well as having lower conduction losses.

-- 200V to 1000V Breakdown

-- 0.038 to 3.0 ohms RDS(on)

-- 4.0 to 54 Amps ID

-- Low Capacitances and low Qg for fast switching and low

switching losses

-- Low RDS(on) for reduced conduction losses and increased power

dissipation

-- Built in hermetic TO-257, TO-254, and TO-258 packages for

Hi-Rel applications or harsh environments where added

protection is required

-- Military screening available

Applications

Applications for these devices include DC/DC converters, Power Factor Correction (PFC) Pre-Regulators, Switchmode Power Supplies, Motor Controls, and Inverters used in Aerospace and Military applications or other harsh environmental applications. Parts are available with and without Mil-PRF-19500 type screening.

Data sheets are available to assist the designer, describing the features and benefits of these new MOSFETs in greater detail. These may be downloaded from APT's website at http://advancedpower.com or obtained from the factory.

Availability and Pricing

Limited samples are available now with volume production also available now. Small volume pricing (500 pieces) ranges from $61.86 to $83.60. Military screening option is available.

                                  BVDSS    RDS(on)    ID
PART NUMBER(a)       Package      Volts     mohms    Amps
===========================================================
APT1003RCLL          TO-254         1000     3000        4
APT6041CLL           TO-254          600      410       14
APT5027CLL           TO-254          500      270       16
APT20M72CLL          TO-254          200       73       31
-----------------------------------------------------------
APT1003RGLL          TO-257         1000     3000      3.6
-----------------------------------------------------------
APT10078HLL          TO-258         1000      780       12
APT8043HLL           TO-258          800      430       16
APT6024HLL           TO-258          600      240       21
APT5017HLL           TO-258          500      170       25
APT20M38HLL          TO-258          200       38       55
-----------------------------------------------------------

(a) See web page for additional part numbers

With Operations in Bend, Oregon, Santa Clara, California, Montgomeryville, Pennsylvania and Bordeaux, France, APT is a leading supplier of high power switching transistors (MOSFETs, IGBTs), Diodes (FRED and Schottky), RF & Microwave Transistors, and Power Modules for RF, Microwave, Linear, and Switchmode Applications.

For additional information, contact APT at 405 SW Columbia Street, Bend, Oregon 97702; Phone: [phone] or 541/382-8028 outside of North America; Fax: [phone]; E-mail: [e-mail]