Accent Releases p-GaN Carrier Concentration Profiling Process Using Electrochemical CV.BEND, Ore. -- Accent Optical Technologies today announced the release of a novel etch process for Electrochemical electrochemical /elec·tro·chem·i·cal/ (-kem´i-k'l) pertaining to interaction or interconversion of chemical and electrical energies. e·lec·tro·chem·i·cal adj. CV carrier concentration profiling of p-doped Gallium Nitride An alloy of gallium and nitrogen (GaN) that is used in semiconductor devices for lasers and LEDs, including blue lasers. Gallium nitride has the thermal and chemical stability required in laser applications. See gallium arsenide. (GaN). Achieving a high concentration of holes in p-type GaN is one of the most critical steps in the manufacture of High-Brightness LEDs or UV lasers for next-generation DVD players. Conventional metrology methods, such as SIMS, measure only the chemical concentration of the dopant dopant Any impurity added to a semiconductor to modify its electrical conductivity. The most common semiconductors, silicon and germanium, form crystalline lattices in which each atom shares electrons with four neighbours (see bonding). species but do not measure the electrically-active carrier concentration. The chemical and electrically-active concentrations can differ in p-GaN by more than an order of magnitude A change in quantity or volume as measured by the decimal point. For example, from tens to hundreds is one order of magnitude. Tens to thousands is two orders of magnitude; tens to millions is three orders of magnitude, etc. . In contrast, ECV ECV External Cephalic Version ECV Enhanced Call Verification (ADT Alarm Services) ECV Extracellular Volume ECV Expanded Capacity Vehicle ECV Electrical Cardioversion ECV Expected Commercial Value ECV Essential Climate Variable profiling directly measures the electrically active carrier concentration, which has direct influence on key performance parameters such as forward voltage and contact resistance. According to Dr. Tom Ryan, Product Manager for Compound Semiconductor Products at Accent, "We have been able to etch and profile n-GaN for some time now but p-GaN has been a challenge because of the behavior of Mg as a deep-level acceptor acceptor - Finite State Machine and the high defect density of GaN materials. Our new method produces a flat and consistent etch profile that enables ECV profiling of complete device structures, and should be of enormous value both as a process control tool in manufacturing and as a development tool in optimizing the Mg activation process." "The p-GaN ECV process will be described in a presentation by my colleague, Mr Akihiko Majima, at the Japanese Applied Physics conference in Tokushima on September 7th," added Dr. Ryan. About Accent Accent Optical Technologies (www.accentopto.com) is a leading supplier of process control systems for silicon and compound semiconductor manufacturers worldwide. The company's legacy dates back over 300 years to its optical instrument manufacturing roots in York, England. Accent specializes in photolithography process control tools, providing industry-leading performance of overlay, critical dimension, and profile metrology to top-tier device manufacturers. Accent is also a major provider of lattice metrology tools, supplying process characterization and control tools to advanced semiconductor industries including those using strained silicon, SOI (Silicon On Insulator) A chip architecture that increases transistor switching speed by reducing capacitance (build-up of electrical charges in the transistor's elements), and thus reducing the discharge time. The power requirement is also reduced in some designs. , or advanced epitaxial layers for high performance logic, wireless communications, optoelectronics, and high brightness LEDs. |
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