AMD research surpasses semiconductor industry's 2009 performance projections.
At the International Conference on Solid State Devices and Materials in Tokyo, AMD (Advanced Micro Devices, Inc., Sunnyvale, CA, www.amd.com) A major manufacturer of semiconductor devices including x86-compatible CPUs, embedded processors, flash memories, programmable logic devices and networking chips. (NYSE NYSE
See: New York Stock Exchange :AMD) researchers detailed their creation of new triple-gate transistors using next-generation silicon-on-insulator (SOI (Silicon On Insulator) A chip architecture that increases transistor switching speed by reducing capacitance (build-up of electrical charges in the transistor's elements), and thus reducing the discharge time. The power requirement is also reduced in some designs. ) and advanced metal gate technologies.
AMD's unique design delivers up to 50 percent better performance than any previously published multi-gate research. This surpasses 2009 requirements set by the International Technology Roadmap for Semiconductors The International Technology Roadmap for Semiconductors is a set of documents produced by a group of semiconductor industry experts. These experts are representative of the sponsoring organisations which include the Semiconductor Industry Associations of the US, Europe, Japan, (ITRS ITRS International Technology Roadmap for Semiconductors
ITRS International Terrestrial Reference System
ITRS International Transaction Reporting System (EU)
ITRS International Technical Rescue Symposium ), but because the design is also highly compatible with current manufacturing techniques, AMD views this technology as a leading candidate for volume production as early as 2007.
"This new triple-gate design takes us one step closer to making multi-gate transistors a production reality. It is this kind of research that enables us to deliver higher performance solutions to our customers on an aggressive schedule," said Craig Sander, vice president of process technology development for AMD. "This multi-gate transistor implementation is highly compatible with current manufacturing techniques, which improves our ability to put this technology into high-volume production."
The primary working parts of a microchip, transistors are microscopic switches that turn the flow of electrical current on and off. Better transistor performance is a key contributor to better microprocessor performance.
The research presented maximizes transistor switching performance and decreases power-wasting leakage by combining several highly advanced technologies into a single structure.
A unique ultra-thin electrical path using fully depleted de·plete
tr.v. de·plet·ed, de·plet·ing, de·pletes
To decrease the fullness of; use up or empty out.
[Latin d silicon-on-insulator (FDSOI FDSOI Fully Depleted Silicon-On-Insulator ) technology is surrounded on three sides with nickel-silicide metal gates. This combination of FDSOI and nickel-silicide metal gates has the effect of straining the silicon lattice within the electrical path to enhance carrier mobility.
Furthermore, the multi-gate, FDSOI structure increases the effective width of the electrical path in the transistor and also provides better electrical control of this path. These factors combine to provide higher ON current, lower OFF current and faster switching, thereby dramatically increasing the overall transistor performance.