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AMD and IBM Detail Early Results Using Immersion and Ultra Low-K in 45nm Chips.


Advanced Technologies Provide Improved Performance and Efficiency While Reducing Complexity in Microprocessor Design and Manufacturing

SAN FRANCISCO San Francisco (săn frănsĭs`kō), city (1990 pop. 723,959), coextensive with San Francisco co., W Calif., on the tip of a peninsula between the Pacific Ocean and San Francisco Bay, which are connected by the strait known as the Golden  -- At the International Electron Device Meeting (IEDM IEDM International Electron Devices Meeting
IEDM Institute Économique de Montréal
) today, IBM (International Business Machines Corporation, Armonk, NY, www.ibm.com) The world's largest computer company. IBM's product lines include the S/390 mainframes (zSeries), AS/400 midrange business systems (iSeries), RS/6000 workstations and servers (pSeries), Intel-based servers (xSeries)  (NYSE NYSE

See: New York Stock Exchange
: IBM) and AMD (Advanced Micro Devices, Inc., Sunnyvale, CA, www.amd.com) A major manufacturer of semiconductor devices including x86-compatible CPUs, embedded processors, flash memories, programmable logic devices and networking chips.  (NYSE: AMD) presented papers describing the use of immersion lithography Immersion lithography is a photolithography resolution enhancement technique that replaces the usual air gap between the final lens and the wafer surface with a liquid medium that has a refractive index greater than one. , ultra-low-K interconnect dielectrics, and multiple enhanced transistor strain techniques for application to the 45nm microprocessor process generation. AMD and IBM expect the first 45nm products using immersion lithography and ultra-low-K interconnect dielectrics to be available in mid-2008.

"As the first microprocessor manufacturers to announce the use of immersion lithography and ultra-low-K interconnect dielectrics for the 45nm technology generation, AMD and IBM continue to blaze a trail of innovation in microprocessor process technology," said Nick Kepler, vice president of logic technology development at AMD. "Immersion lithography will allow us to deliver enhanced microprocessor design definition and manufacturing consistency, further increasing our ability to deliver industry-leading, highly sophisticated products to our customers. Ultra-low-K interconnect dielectrics will further extend our industry-leading microprocessor performance-per-watt ratio for the benefit of all of our customers. This announcement is another proof of IBM and AMD's successful research and development collaboration."

Current process technology uses conventional lithography, which has significant limitations in defining microprocessor designs beyond the 65nm process technology generation. Immersion lithography uses a transparent liquid to fill the space between the projection lens of the step-and-repeat lithography system and the wafer that contains hundreds of microprocessors. This significant advance in lithography provides increased depth of focus and improved image fidelity that can improve chip-level performance and manufacturing efficiency. This immersion technique will give AMD and IBM manufacturing advantages over competitors that are not able to develop a production-class immersion lithography process for the introduction of 45nm microprocessors. For example, the performance of an SRAM See static RAM.

SRAM - static random-access memory
 cell shows improvements of approximately 15 per cent due to this enhanced process capability, without resorting to more costly double-exposure techniques.

In addition, the use of porous, ultra-low-K dielectrics to reduce interconnect capacitance and wiring delay is a critical step in further improving microprocessor performance as well as lowering power dissipation. This advance is enabled through the development of an industry-leading ultra-low-K process integration that reduces the dielectric constant dielectric constant
n.
See permittivity.
 of the interconnect dielectric dielectric (dī'ĭlĕk`trĭk), material that does not conduct electricity readily, i.e., an insulator (see insulation). A good dielectric should also have other properties: It must resist breakdown under high voltages; it should not  while maintaining the mechanical strength. The addition of ultra-low-K interconnect provides a 15 per cent reduction in wiring-related delay as compared to conventional low-K dielectrics.

"The introduction of immersion lithography and ultra-low-K interconnect dielectrics at 45nm is an early example of the successful transfer of technology from our ground-breaking research work at the Albany Nanotech Center to IBM's state-of-the-art 300mm manufacturing and development line at East Fishkill, New York East Fishkill is a town in Dutchess County, New York, United States. The population was 25,589 at the 2000 census. The town name is derived from its formation from Fishkill, NY.

The Town of East Fishkill is on the south border of the county.
, as well as AMD's state-of-the-art 300mm manufacturing line in Dresden, Germany," said Gary Patton, vice president, technology development at IBM's Semiconductor Research and Development Center. "The successful integration of leadership technologies with AMD and our partners demonstrates the strength of our collaborative innovation model."

The continued enhancement of AMD and IBM's transistor strain techniques has enabled the continued scaling of transistor performance while overcoming industry-wide, geometry-related scaling issues associated with migrating to 45nm process technologies. In spite of the increased packing density of the 45nm generation transistors, IBM and AMD have demonstrated an 80 per cent increase in p-channel transistor drive current and a 24 per cent increase in n-channel transistor drive current compared to unstrained transistors. This achievement results in the highest CMOS (Complementary Metal Oxide Semiconductor) Pronounced "c-moss." The most widely used integrated circuit design. It is found in almost every electronic product from handheld devices to mainframes.  performance reported to date in a 45nm process technology.

IBM and AMD have been collaborating on the development of next-generation semiconductor manufacturing technologies since January 2003. In November 2005, the two companies announced an extension of their joint development efforts until 2011 covering 32nm and 22nm process technology generations.

About AMD

Advanced Micro Devices (NYSE: AMD) is a leading global provider of innovative microprocessor solutions for computing, communications and consumer electronics markets. Founded in 1969, AMD is dedicated to delivering superior computing solutions based on customer needs that empower users worldwide. For more information visit www.amd.com.

About IBM

IBM semiconductor technologies are a major contributor to the company's position as the world's largest information technology company. Its chip products and solutions power IBM eServer This article is about the IBM family of computer servers. For the open access electronic text archive, see EServer.org.
IBM eServer was a family of computer servers from IBM Corporation.
 and TotalStorage systems as well as many of the world's best-known electronics brands. IBM semiconductor innovations include dual-core microprocessors, copper wiring, silicon-on-insulator and silicon germanium (SiGe) A semiconductor material made from silicon and germanium. Germanium is very similar to silicon, but when one layer is grown on top of the other to form the base of the transistor, the resulting transistor can switch faster and yield higher performance.  transistors, strained silicon A technique that deposits silicon (Si) on top of silicon germanium (SiGe) for making transistors on a chip. In so doing, the silicon atoms are stretched ("strained") to line up with the silicon germanium atoms, which are wider apart. , and eFUSE, a technology that enables computer chips to automatically respond to changing conditions. More information is available at: http://www.ibm.com/chips.

AMD, the AMD Arrow logo, and combinations thereof are trademarks of Advanced Micro Devices, Inc. Other names are for informational purposes only and may be trademarks of their respective owners.
COPYRIGHT 2006 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2006, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

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Publication:Business Wire
Date:Dec 12, 2006
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