[M.sup.3] writes line patterns.

Using the NIST-developed Molecular Measuring Machine ([M.sup.3]), nanoscale lines have been accurately drawn on a silicon substrate. The writing method is based on scanning probe oxidation lithography, previously developed at NIST. The substrate is a hydrogen-terminated Si(111) surface. Recent work at NIST has elucidated means of consistently preparing high quality H-Si(111) surfaces. The [M.sup.3] probe tip is guided over the surface under interferometer-based control to accurately position the written features. A high tunneling bias voltage of up to 10 V was used for writing. The initial features drawn were lines and concentric boxes with 100 nm line spacings. The lines were 10 nm to 20 nm wide and about 4 nm high. By varying the writing voltage, similarly sized trenches could also be written. These features were imaged after writing by using [M.sup.3], operating at a lower, non-writing, bias voltage. The writing and imaging were done in vacuum. The features were then confirmed in measurements done by a NIST researcher, imaging with an atomic force microscope in air. The initial results demonstrate the possibility of making unique calibration artifacts that can be used for intercomparison between tools within NIST, and for the dissemination of length at the nanoscale.

CONTACT: John Kramar, [phone]; [e-mail] or Rick Silver, [phone]; [e-mail].